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首页> 外文期刊>Advanced Functional Materials >High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors
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High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors

机译：基于单晶n沟道有机纳米线的高性能光电晶体管和光生载流子行为

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摘要

The photoelectronic characteristics of single-crystalline nanowire organic phototransistors (NW-OPTs) are studied using a high-performance n-channel organic semiconductor, N,N'-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI), as the photoactive layer. The optoelectronic performances of the NW-OPTs are analyzed by way of their current-voltage (I-V) characteristics on irradiation at different wavelengths, and comparison with corresponding thin-film organic phototransistors (OPTs). Significant enhancement in the charge-carrier mobility of NW-OPTs is observed upon light irradiation as compared with when performed in the dark. A mobility enhancement is observed when the incident optical power density increases and the wavelength of the light source matches the light-absorption range of the photoactive material. The photoswitching ratio is strongly dependent upon the incident optical power density, whereas the photoresponsivity is more dependent on matching the light-source wavelength with the maximum absorption range of the photoactive material. BPE-PTCDI NW-OPTs exhibit much higher external quantum efficiency (EQE) values (≈7900 times larger) than thin-film OPTs, with a maximum EQE of 263 00096. This is attributed to the intrinsically defect-free single-crystalline nature of the BPE-PTCDI NWs. In addition, an approach is devised to analyze the charge-transport behaviors using charge accumulation/release rates from deep traps under on/off switching of external light sources.
机译：使用高性能n通道有机半导体N，N'-双（2-苯乙基）-per-3,4：9,10-研究了单晶纳米线有机光电晶体管（NW-OPT）的光电特性四羧酸二酰亚胺（BPE-PTCDI），作为光敏层。通过在不同波长照射下的NW-OPT的电流-电压（I-V）特性，并与相应的薄膜有机光电晶体管（OPT）进行比较，来分析NW-OPT的光电性能。与在黑暗中进行时相比，在光照射下观察到NW-OPT的电荷载流子迁移率显着提高。当入射光功率密度增加并且光源的波长与光敏材料的光吸收范围匹配时，观察到迁移率提高。光开关比在很大程度上取决于入射光功率密度，而光响应性则更多地取决于使光源波长与光敏材料的最大吸收范围相匹配。 BPE-PTCDI NW-OPT与薄膜OPT相比，具有更高的外部量子效率（EQE）值（约为7900倍），最大EQE为26300096。这归因于BPE-PTCDI NW-OPT的固有无缺陷单晶性质。 BPE-PTCDI NW。另外，设计了一种方法，该方法使用在外部光源的开/关切换下来自深陷阱的电荷累积/释放速率来分析电荷传输行为。

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  • 来源
    《Advanced Functional Materials》 |2013年第5期|629-639|共11页
  • 作者

    Hojeong Yu; Zhenan Bao; Joon Hak Oh;

  • 作者单位

    School of Nano-Bioscience and Chemical Engineering KIER-UNIST Advanced Center for Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, South Korea;

    Department of Chemical Engineering Stanford University 381 North South Mall, Stanford, CA 94305, USA;

    School of Nano-Bioscience and Chemical Engineering KIER-UNIST Advanced Center for Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, South Korea;

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