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首页> 外文期刊>Advanced Functional Materials >The Role of Sulfur in Solution-Processed Cu_2ZnSn(S,Se)_4 and its Effect on Defect Properties
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The Role of Sulfur in Solution-Processed Cu_2ZnSn(S,Se)_4 and its Effect on Defect Properties

机译：硫在固溶处理的Cu_2ZnSn（S，Se）_4中的作用及其对缺陷性质的影响

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摘要

Understanding the electrically active defects in kesterite Cu_2ZnSn-(S,Se)_4(CZTSSe) is critical for the continued development of solar cells based on this material, but challenging due to the complex nature of this polycrys-talline multinary material. A comparative study of CZTSSe alloys with three different bandgaps, made by introducing different fractions of sulfur during the annealing process, is presented. Using admittance spectroscopy, drive level capacitance profiling, and capacitance-voltage profiling, the dominant defect energy level present in the low sulfur content device is determined to be 0.134 eV above the valence band maximum, with a bulk defect density of 8×10~(14) cm~(-3), while the high sulfur content device shows a deeper defect energy level of 0.183 eV and a higher bulk defect density, 8.2 ×10~(15) cm~(-3). These findings are consistent with the current density-voltage characteristics of the resulting solar cells and their external quantum efficiency. It suggests that as the sulfur content increases, the bandgap of the absorber is enlarged, leading to an increasing open-circuit voltage (V_(oc)), that is accompanied by stronger recombination due to the higher defect density of the sulfur-rich absorber. This is reflected in large V_(oc) deficit and poor carrier collection of the high sulfur content device.
机译：理解钾长石Cu_2ZnSn-（S，Se）_4（CZTSSe）中的电活性缺陷对于基于这种材料的太阳能电池的持续开发至关重要，但由于这种多晶-talline多元材料的复杂性而具有挑战性。提出了通过退火过程中引入不同含量的硫制成的具有三种不同带隙的CZTSSe合金的对比研究。使用导纳光谱法，驱动级电容分布图和电容电压分布图，确定低硫含量器件中存在的主要缺陷能级为价带最大值以上0.134 eV，体缺陷密度为8×10〜（ 14）cm〜（-3），而高硫含量的器件显示出更深的缺陷能级0.183 eV和更高的体缺陷密度8.2×10〜（15）cm〜（-3）。这些发现与所得太阳能电池的电流密度-电压特性及其外部量子效率一致。这表明随着硫含量的增加，吸收器的带隙增大，导致开路电压（V_（oc））的增加，由于富硫吸收器的缺陷密度较高，因此伴随着更强的复合。这反映在高硫含量设备的V_（oc）缺陷大和载流子收集差的情况下。

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  • 来源
    《Advanced Functional Materials》 |2013年第11期|1466-1471|共6页
  • 作者

    Hsin-Sheng Duan; Wenbing Yang; Brion Bob; Chia-Jung Hsu; Bao Lei; Yang Yang;

  • 作者单位

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

    Department of Materials Science and Engineering and California NanoSystem Institute University of California Los Angeles Los Angeles, CA 90095, USA;

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