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首页> 外文期刊>Advanced Functional Materials >Top-Down Fabrication of High Quality Ⅲ-Ⅴ Nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation
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Top-Down Fabrication of High Quality Ⅲ-Ⅴ Nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation

机译：通过单层控制雕刻和同时钝化自上而下地制造高质量的Ⅲ-Ⅴ纳米结构

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摘要

In the fabrication of Ⅲ-Ⅴ semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down nanofabrication is demonstrated by the realization of InP-based high optical quality nanowire arrays, with aspect ratios more than 50, and nanostructures with new topologies. The findings are relevant for other Ill-V semiconductors and have potential applications in Ⅲ-Ⅴ device technologies.
机译：在用于电子和光电子器件的Ⅲ-Ⅴ半导体纳米结构的制造中，能够以单层精度去除材料的技术与材料生长一样重要，以获得最佳的器件性能。使用硫（S）-油胺（OA）溶液证明了一种可靠的化学处理方法，该溶液以反外延的方式逐层腐蚀并同时钝化表面。通过实现纵横比大于50的基于InP的高光学质量纳米线阵列以及具有新拓扑结构的纳米结构，证明了该工艺在推动自上而下纳米加工极限方面的应用。该发现与其他III-V族半导体相关，并且在Ⅲ-Ⅴ族器件技术中具有潜在的应用。

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  • 来源
    《Advanced Functional Materials》 |2013年第13期|1620-1627|共8页
  • 作者

    Shagufta Naureen; Naeem Shahid; Reza Sanatinia; Srinivasan Anand;

  • 作者单位

    School of Information and Communication Technology KTH-Royal Institute of Technology Electrum 229, Kista S "14164 Sweden;

    School of Information and Communication Technology KTH-Royal Institute of Technology Electrum 229, Kista S "14164 Sweden;

    School of Information and Communication Technology KTH-Royal Institute of Technology Electrum 229, Kista S "14164 Sweden;

    School of Information and Communication Technology KTH-Royal Institute of Technology Electrum 229, Kista S "14164 Sweden;

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