机译:具有连续电阻状态的非易失性自旋电子存储元件
Department of Physics University of Gothenburg 412 96 Gothenburg, Sweden;
Department of Physics University of Gothenburg 412 96 Gothenburg, Sweden;
Materials Physics School of Information and Communication Technology KTH - Royal Institute of Technology Electrum 229, 164 40 Stockholm-Kista, Sweden;
Materials Physics School of Information and Communication Technology KTH - Royal Institute of Technology Electrum 229, 164 40 Stockholm-Kista, Sweden;
Materials Physics School of Information and Communication Technology KTH - Royal Institute of Technology Electrum 229, 164 40 Stockholm-Kista, Sweden;
Department of Physics University of South Florida Tampa, FL 33620, USA;
Department of Physics University of Gothenburg 412 96 Gothenburg, Sweden,Materials Physics School of Information and Communication Technology KTH - Royal Institute of Technology Electrum 229, 164 40 Stockholm-Kista, Sweden;
机译:基于三端子存储单元的非易失性自旋电子存储阵列性能基准测试
机译:非易失性新兴记忆概述—用于工作记忆的自旋电子学
机译:用于计算内存架构的非易失性低成本近似旋转式全加入器
机译:使用电压控制自旋电子存储单元进行内存中计算的非易失性XNOR逻辑门的建议
机译:电阻开关元件的非易失性存储器设计与建模
机译:晶体管存储器:45-二氮杂芴基供体-受体小分子作为可调非易失性有机晶体管存储器的电荷俘获元件(Adv。Sci。12/2018)
机译:晶体管内存:基于4,5-二氮杂芳烃的供体 - 受体小分子作为电荷捕获元件,用于可调谐非易失性有机晶体管内存(ADV。SCI。12/2018)