首页> 外文期刊>Advanced Functional Materials >All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends
【24h】

All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends

机译:基于纳米相分离的PCBM-铁电共混物的全聚合物双稳态电阻存储器件

获取原文
获取原文并翻译 | 示例
           

摘要

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesu-Ifonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms≈7.94 nm) and with good reproducibility. The devices exhibit high I_on/I_off ratios (≈3 x10~3), low read voltages (≈5V), excellent dielectric response at high frequencies (εr≈8.3 at 1 MHz), and excellent retention characteristics up to 10000 s.
机译:所有聚合物非易失性双稳态存储器件均由铁电聚偏二氟乙烯-三氟乙烯(P(VDF-TrFE))和n型半导体[6,6]-苯基-C61-丁酸甲酯(PCBM)的混合物制成。相分离膜由从底部电极到顶部电极延伸的PCBM域组成,被铁电P(VDF-TrFE)基质包围高导电性聚(3,4-乙撑二氧噻吩):聚苯乙烯-磺酸盐(PEDOT:PSS)聚合物电极用于在界面处设计能带偏移。由于该注入势垒的调节,该器件显示出电阻切换行为。通过仔细优化溶剂和工艺条件,可以旋涂非常光滑的共混膜(Rrms≈7.94nm )具有高I / on / I_off比(≈​​3x10〜3),低读取电压(≈5V),在高频下具有出色的介电响应(在1 MHz下为εr≈8.3)和高达良好的保持特性到10000秒

著录项

  • 来源
    《Advanced Functional Materials》 |2013年第17期|2145-2152|共8页
  • 作者单位

    King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Saudi Arabia;

    King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Saudi Arabia;

    King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Saudi Arabia;

    King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Saudi Arabia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号