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Work-Function Engineering of Craphene Anode by Bis(trif1uoromethanesulfonyl)amide Doping for Efficient Polymer Light-Emitting Diodes

机译：双（三氟甲磺酰基）酰胺掺杂制备高效聚合物发光二极管的Crphenene阳极功函数工程

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摘要

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light-emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF_3SO_2]_2NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin-coating process. After TFSA doping, the sheet resistance of the TFSA-doped five-layer graphene, with optical transmittance of =88%, is as low as ≈90 Ω sq~(-1) The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA-doped graphene anode are 9.6 cd A~(-1) and 10.5 Im W~(-1) respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.
机译：石墨烯已被认为是潜在的替代透明和柔性电极，用于替代可商购的铟锡氧化物（ITO）阳极。然而，与ITO相比，石墨烯的相对较高的薄层电阻和较低的功函限制了将石墨烯用作有机或聚合物发光二极管（OLED或PLED）的阳极的应用。在此，通过使用双（三氟甲磺酰基）酰胺（TFSA，[CF_3SO_2] _2NH）掺杂的石墨烯阳极制成的柔性PLED被证明具有低薄层电阻和高功函数。通过简单的旋涂工艺，可以轻松地用TFSA掺杂石墨烯。 TFSA掺杂后，TFSA掺杂的五层石墨烯的薄层电阻（透光率= 88％）低至≈90Ωsq〜（-1）。在其上制造的PLED的最大电流效率和功率效率掺杂TFSA的石墨烯阳极分别为9.6 cd A〜（-1）和10.5 Im W〜（-1）。这些值明显高于在原始石墨烯阳极上制造的PLED的值，并且与ITO阳极的值相当。

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  • 来源
    《Advanced Functional Materials》 |2013年第40期|5049-5055|共7页
  • 作者

    Donghyuk Kim; Dongchan Lee; Yonghee Lee; Duk Youngjeon;

  • 作者单位

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu Daejeon, 305-701, Republic of Korea;

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