• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Evidence for Edge-State Photoluminescence in Graphene Quantum Dots
【24h】

Evidence for Edge-State Photoluminescence in Graphene Quantum Dots

机译：石墨烯量子点中边缘态光致发光的证据

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For a practical realization of graphene-based logic devices, the opening of a band gap in graphene is crucial and has proven challenging. To this end, several synthesis techniques, including unzipping of carbon nanotubes, chemical vapor deposition, and other bottom-up fabrication techniques have been pursued for the bulk production of graphene nanoribbons (CNRs) and graphene quantum dots (GQDs). However, only limited progress has been made towards a fundamental understanding of the origin of strong photoluminescence (PL) in GQDs. Here, it is experimentally shown that the PL is independent of the functionalization scheme of the GQDs. Following a series of annealing experiments designed to passivate the free edges, the PL in GQDs originates from edge-states, and an edge-passivation subsequent to synthesis quenches the PL. The results of PL studies of GNRs and carbon nano-onions are shown to be consistent with PL being generated at the edge sites of GQDs.
机译：对于基于石墨烯的逻辑器件的实际实现，打开石墨烯中的带隙至关重要，并且已证明具有挑战性。为此，为了批量生产石墨烯纳米带（CNR）和石墨烯量子点（GQD），已经寻求了几种合成技术，包括碳纳米管的解压，化学气相沉积和其他自下而上的制造技术。但是，在基本了解GQD中强光致发光（PL）的起源方面仅取得了有限的进展。在这里，实验表明PL与GQD的功能化方案无关。经过一系列旨在钝化自由边缘的退火实验后，GQD中的PL源自边缘态，合成后的边缘钝化将PL淬灭。研究表明，GNR和碳纳米洋葱的PL研究结果与在GQD边缘部位产生的PL一致。

著录项

  • 来源
    《Advanced Functional Materials》 |2013年第40期|5062-5065|共4页
  • 作者

    Kiran Lingam; Ramakrishna Podila; Haijun Qian; Steven Serkiz; Apparao M. Rao;

  • 作者单位

    Department of Physics and Astronomy Clemson University Clemson, SC 29634, USA;

    Department of Physics and Astronomy Clemson University Clemson, SC 29634, USA;

    Electron Microscope Facility Clemson Research Park Clemson University Anderson, SC 29625, USA;

    Savannah River National Laboratory Aiken, SC 29808, USA;

    Department of Physics and Astronomy Clemson University Clemson, SC 29634, USA,Center for Optical Materials Science and Engineering Technologies Clemson University Clemson, SC 29634, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号