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Enhanced Performance of a ZnO Nanowire-Based Self-Powered Glucose Sensor by Piezotronic Effect

机译:压电效应增强基于ZnO纳米线的自供电葡萄糖传感器的性能

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摘要

A self-powered, piezotronic effect-enhanced glucose sensor based on metal-semiconductor-metal (M-S-M) structured single ZnO nanowire device is demonstrated. A triboelectrical nanogenerator (TENG) is integrated to build a self-powered glucose monitoring system (CMS) to realize the continuously monitoring of glucose concentrations. The performance of the glucose sensor is generally enhanced by the piezotronic effect when applying a -0.79% com-pressive strain on the device, and magnitude of the output signal is increased by more than 200%; the sensing resolution and sensitivity of sensors are improved by more than 200% and 300%, respectively. A theoretical model using energy band diagram is proposed to explain the observed results. This work demonstrates a promising approach to raise the sensitivity, improve the sensing resolution, and generally enhance the performance of glucose sensors, also providing a possible way to build up a self-powered CMS.
机译:展示了一种基于金属-半导体-金属(M-S-M)结构的单ZnO纳米线器件的自供电压电效应增强型葡萄糖传感器。集成了摩擦电纳米发电机(TENG)以构建自供电的葡萄糖监测系统(CMS),以实现对葡萄糖浓度的连续监测。当在设备上施加-0.79%的压缩应变时,压电效应通常会增强压电传感器的性能,并且输出信号的幅度会增加200%以上;传感器的感测分辨率和灵敏度分别提高了200%和300%以上。提出了使用能带图的理论模型来解释观测结果。这项工作展示了一种有前途的方法,可以提高灵敏度,提高感测分辨率并通常增强葡萄糖传感器的性能,还为建立自供电CMS提供了一种可能的方法。

著录项

  • 来源
    《Advanced Functional Materials》 |2013年第47期|5868-5874|共7页
  • 作者单位

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332-0245, USA;

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332-0245, USA,Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences, Beijing, China;

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332-0245, USA;

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332-0245, USA;

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332-0245, USA,Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences, Beijing, China;

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