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首页> 外文期刊>Advanced Functional Materials >Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO_x/TiO_y/TiO_x and Hetero TiO_x/TiON/TiO_x Triple Multilayer Frameworks
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Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO_x/TiO_y/TiO_x and Hetero TiO_x/TiON/TiO_x Triple Multilayer Frameworks

机译：均质TiO_x / TiO_y / TiO_x和杂相TiO_x / TiON / TiO_x三重多层框架中的氧离子漂移诱导的互补电阻转换

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摘要

Developing a means by which to compete with commonly used Si-based memory devices represents an important challenge for the realization of future three-dimensionally stacked crossbar-array memory devices with multifunc-tionality. Therefore, oxide-based resistance switching memory (ReRAM), with its associated phenomena of oxygen ion drifts under a bias, is becoming increasingly important for use in nanoscalable crossbar arrays with an ideal memory cell size due to its simple metal-insulator-metal structure and low switching current of 10-100 μA. However, in a crossbar array geometry, one single memory element defined by the cross-point of word and bit lines is highly susceptible to unintended leakage current due to parasitic paths around neighboring cells when no selective devices such as diodes or transistors are used. Therefore, the effective complementary resistive switching (CRS) features in all Ti-oxide-based triple layered homo R/TiO_y/TiO_y/TiO_x/Pt and hetero Pt/ TiO_x/TiON/TiO_x/Pt geometries as alternative resistive switching matrices are reported. The possible resistive switching nature of the novel triple matrices is also discussed together with their electrical and structural properties. The ability to eliminate both an external resistor for efficient CRS operation and a metallic Pt middle electrode for further cost-effective scalability will accelerate progress toward the realization of cross-bar ReRAM in this framework.
机译：开发一种与常用的基于Si的存储设备竞争的方法，对于实现未来的具有多功能性的三维堆叠式交叉开关阵列存储设备而言，是一项重要的挑战。因此，基于氧化物的电阻开关存储器（ReRAM）及其相关的氧离子在偏压下漂移的现象，由于其简单的金属-绝缘体-金属结构，对于具有理想存储单元尺寸的纳米级交叉开关阵列中的使用而言，变得越来越重要。和10-100μA的低开关电流。然而，在交叉开关阵列的几何形状中，当不使用诸如二极管或晶体管的选择性器件时，由于相邻单元周围的寄生路径，由字线和位线的交叉点限定的单个存储元件极易受到意外泄漏电流的影响。因此，报告了所有基于Ti氧化物的三层均质R / TiO_y / TiO_y / TiO_x / Pt和异质Pt / TiO_x / TiON / TiO_x / Pt几何形状中的有效互补电阻开关（CRS）特性，作为替代的电阻开关矩阵。还讨论了新型三重矩阵的可能的电阻切换性质，以及它们的电学和结构性质。消除用于有效CRS操作的外部电阻器和用于进一步节省成本的可扩展性的金属Pt中间电极的能力将加速在此框架中实现交叉Bar ReRAM的进展。

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  • 来源
    《Advanced Functional Materials》 |2012年第4期|p.709-716|共8页
  • 作者

    Yoon Cheol Bae; Ah Rahm Lee; Ja Bin Lee; Ja Hyun Koo; Kyung Cheol Kwon; Jea Gun Park; Hyun Sik Im; Jin Pyo Hong;

  • 作者单位

    Division of Nanoscale Semiconductor Engineering Hanyang University Seoul, 133-791, South Korea;

    Division of Nanoscale Semiconductor Engineering Hanyang University Seoul, 133-791, South Korea;

    The Research Institute for Natural Sciences Novel Founctional Materials and Devices Lab., Department of Physics Hanyang University Seoul, 133-791, South Korea;

    The Research Institute for Natural Sciences Novel Founctional Materials and Devices Lab., Department of Physics Hanyang University Seoul, 133-791, South Korea;

    Division of Nanoscale Semiconductor Engineering Hanyang University Seoul, 133-791, South Korea,National Program Center for Tera-bit-level Nonvolatile Memory Development Hanyang University Seoul 133-791, South Korea;

    National Program Center for Tera-bit-level Nonvolatile Memory Development Hanyang University Seoul 133-791, South Korea,Department of Electronic Engineering Hanyang University Seoul 133-791, South Korea;

    Department of Semiconductor Science Dongguk University Seoul 100-715, South Korea;

    Division of Nanoscale Semiconductor Engineering Hanyang University Seoul, 133-791, South Korea,The Research Institute for Natural Sciences Novel Founctional Materials and Devices Lab., Department of Physics Hanyang University Seoul, 133-791, South Korea;

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