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首页> 外文期刊>Advanced Functional Materials >Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate
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Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate

机译：通过智能Janus基板自主控制晶圆尺寸的高质量石墨烯的均匀生长

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摘要

The work reports a new method for large-area growth of graphene films, which have been predicted to have novel and broad applications in the future. While chemical vapor deposition (CVD) is currently the preferred method, it suffers from a rather narrow processing window, and there is also much to be desired in the electrical properties of the CVD films. A new method for large-area growth of graphene films is reported to overcome the narrow processing window of the CVD method. A composite substrate made of a C-dissolving top (Ni) layer and a C-rejecting bottom (Cu) layer is designed, which evolves into a C-rejecting mixture, to autonomously regulate the C content at an elevated yet stable level at and near the surface over an extended duration. This "smart" substrate promotes graphene formation over a wide temperature-gas composition window, leading to reliable growth of wafer-sized graphene films of defined layer-thickness and superior electrical-optical properties. This "smart"-substrate strategy can also be implemented on Si and SiO_2 supports, paving the way toward the direct fabrication of large area, graphene-enabled electronic and photonic devices.
机译：这项工作报告了一种用于石墨烯薄膜大面积生长的新方法，预计该方法在未来会具有新颖而广泛的应用。尽管化学气相沉积（CVD）当前是优选的方法，但是其具有相当窄的处理窗口，并且在CVD膜的电性能方面也有很多期望。据报道，用于大面积生长石墨烯膜的新方法克服了CVD方法的狭窄加工窗口。设计了由C溶解顶层（Ni）层和C排斥底层（Cu）层制成的复合衬底，该复合衬底演变为C排斥混合物，以在升高的温度和稳定的温度下自主调节C含量。在延长的时间附近的表面。这种“智能”基板可在宽广的温度-气体成分范围内促进石墨烯的形成，从而可可靠地生长具有确定的层厚度和优异的光电性能的晶圆级石墨烯薄膜。这种“智能”衬底策略也可以在Si和SiO_2支撑物上实施，从而为直接制造大面积，启用石墨烯的电子和光子器件铺平了道路。

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  • 来源
    《Advanced Functional Materials》 |2012年第5期|p.1033-1039|共7页
  • 作者

    Dongyun Wan; Tianquan Lin; Hui Bi; Fuqiang Huang; Xiaoming Xie; I.-Wei Chen; Mianheng Jiang;

  • 作者单位

    CAS Key Laboratory of Materials for Energy Conversion Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050, P.R. China;

    CAS Key Laboratory of Materials for Energy Conversion Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050, P.R. China;

    CAS Key Laboratory of Materials for Energy Conversion Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050, P.R. China;

    CAS Key Laboratory of Materials for Energy Conversion Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050, P.R. China;

    State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050, P.R. China;

    Department of Materials Science and Engineering University of Pennsylvania Philadelphia, PA 19104, USA;

    State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050, P.R. China;

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