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首页> 外文期刊>RSC Advances >Breakdown of self-limiting growth on oxidized copper substrates: a facile method for large-size high-quality bi- and trilayer graphene synthesis
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Breakdown of self-limiting growth on oxidized copper substrates: a facile method for large-size high-quality bi- and trilayer graphene synthesis

机译：分解氧化铜基底上自限生长的方法：一种用于大规模高质量双层和三层石墨烯合成的简便方法

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摘要

Synthesis of large sized high-quality bi- and trilayer graphene grains in chemical vapor deposition on a copper surface is still a challenge due to the self-limiting growth. In this work, we demonstrated a facile way to break the self-limiting growth on copper by replacing fresh copper surface with oxidized copper surface, in which copper nanoparticles induced by oxidation play a vital role in the graphene nucleation process. As a result, a high yield of bi-and trilayer graphene grains with average size of similar to 80 mu m and similar to 50 mu m in diameter can be easily achieved. The high quality of grains has been identified by Raman, selected area electron diffraction and electronic measurement. Moreover, the yield and distribution of bi-and trilayer grains can be tuned by the morphologies of oxidized copper substrates, namely, the distribution of copper nanoparticles, supporting the strong positive relationship between copper nanoparticles and graphene nuclei (bi-and trilayer grains).
机译：由于自限生长，在化学气相沉积在铜表面上合成大尺寸高质量双层和三层石墨烯晶粒仍然是一个挑战。在这项工作中，我们展示了一种通过用氧化的铜表面代替新鲜的铜表面来打破铜上自限性生长的简便方法，其中氧化诱导的铜纳米颗粒在石墨烯成核过程中起着至关重要的作用。结果，可以容易地获得平均尺寸近似于80μm且近似于50μm的平均厚度的双层和三层石墨烯晶粒。拉曼光谱仪，选定区域电子衍射仪和电子测量仪已鉴定出高品质的谷物。此外，双层和三层晶粒的产量和分布可以通过氧化铜基板的形态来调节，即铜纳米颗粒的分布，支持铜纳米颗粒和石墨烯核（双层和三层晶粒）之间的强正关系。

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