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Interface and Surface Cation Stoichiometry Modified by Oxygen Vacancies in Epitaxial Manganite Films

机译：外延锰薄膜中氧空位修饰的界面和表面阳离子化学计量

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摘要

Perovskite manganites are viewed as one of the key building blocks of oxide spintronics devices due to their attractive physical properties. However, cation off-stoichiometry at epitaxial interfaces between manganites and other materials can lead to interfacial dead layers, severely reducing the device performance. Here, transmission electron microscopy and synchrotron-based spectroscopy are used to demonstrate that oxygen vacancies during growth serve as a critical factor for modifying the cation stoichiometry in pulsed laser deposited La_(0.8)Sr_(0.2)MnO_3 films. Near the film/substrate (SrTiO_3) interface, A-site cations (La/Sr) are in excess when oxygen vacancies are induced during film growth, partially substituting Mn. Simultaneously, Sr cations migrate towards the film surface and form a SrO rock-salt monolayer. Consequentially, a gradient of the Mn nominal valence is observed along the film growth direction, leading to anomalous magnetic properties. The results narrow the selection range of useful oxygen pressures during deposition and demonstrate that accurate cation stoichiometry can only be achieved after oxygen vacancies are eliminated during growth. This finding suggests that the oxygen pressure serves as a tuning parameter for the interfacial dead layers and, hence, for control over device properties.
机译：钙钛矿锰矿因其吸引人的物理特性而被视为氧化物自旋电子器件的关键组成部分之一。但是，锰与其他材料之间的外延界面处的阳离子化学计量失误会导致界面死层，从而严重降低器件性能。在这里，使用透射电子显微镜和基于同步加速器的光谱法来证明生长期间的氧空位是改变脉冲激光沉积La_（0.8）Sr_（0.2）MnO_3膜中阳离子化学计量的关键因素。在膜/基底（SrTiO_3）界面附近，当在膜生长过程中引起氧空位时，A位阳离子（La / Sr）过量，部分取代了Mn。同时，Sr阳离子向薄膜表面迁移并形成SrO岩盐单层。因此，沿着膜生长方向观察到Mn标称价的梯度，导致异常的磁性。结果缩小了沉积过程中有用氧压的选择范围，并证明只有在生长过程中消除氧空位之后，才能实现准确的阳离子化学计量。该发现表明，氧气压力用作界面死层的调节参数，因此，用于控制器件性能。

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  • 来源
    《Advanced Functional Materials》 |2012年第20期|p.4312-4321|共10页
  • 作者

    Zhipeng Li; Michel Bosman; Zhen Yang; Peng Ren; Lan Wang; Liang Cao; Xiaojiang Yu; Chang Ke; Mark B. H. Breese; Andrivo Rusydi; Weiguang Zhu; Zhili Dong; Yong Lim Foo;

  • 作者单位

    School of Materials Science and Engineering Nanyang Technological University Singapore 639798, Singapore;

    Institute of Materials Research and Engineering Agency for Science, Technology and Research (A*STAR) 3 Research Link, Singapore 117602, Singapore;

    School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798, Singapore;

    Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371, Singapore;

    Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371, Singapore;

    Physics Department Faculty of Science National University of Singapore 2 Science Drive 3, 117551, Singapore;

    Physics Department Faculty of Science National University of Singapore 2 Science Drive 3, 117551, Singapore;

    School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798, Singapore;

    Physics Department Faculty of Science National University of Singapore 2 Science Drive 3, 117551, Singapore;

    Physics Department Faculty of Science National University of Singapore 2 Science Drive 3, 117551, Singapore;

    School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798, Singapore;

    School of Materials Science and Engineering Nanyang Technological University Singapore 639798, Singapore;

    Institute of Materials Research and Engineering Agency for Science, Technology and Research (A*STAR) 3 Research Link, Singapore 117602, Singapore;

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