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首页> 外文期刊>Advanced Functional Materials >Doping of Organic Semiconductors Using Molybdenum Trioxide: a Quantitative Time-Dependent Electrical and Spectroscopic Study
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Doping of Organic Semiconductors Using Molybdenum Trioxide: a Quantitative Time-Dependent Electrical and Spectroscopic Study

机译：使用三氧化钼掺杂有机半导体：随时间变化的电学和光谱学研究

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摘要

Doping of organic semiconductors (OSCs) with transition metal oxides such as molybdenum trioxide (MoO-3) has been used as a powerful method to overcome common issues such as contact resistance and low conductivity, which are limiting factors in organic optoelectronic devices. In this study, the mechanism and efficiency of MoO_3-induced p-type doping in OSCs are investigated by means of simultaneous electrical and spectroscopic measurements on lateral diodes. It is demonstrated that energetic changes in the MoO_3 energy levels outside vacuum can limit charge-transfer doping and device performance. It is shown and investigated that these changes crucially depend on the OSC. The time evolution of important OSC parameters such as induced charge density, doping concentration and efficiency, conductivity and mobility, is deduced. Moreover, the energetic and chemical changes in M0O_3 are investigated via ultraviolet and x-ray photoemission spectroscopy. Combining these experiments, important conclusions are drawn on the time-dependence and stability of MoO_3-doping of OSCs, as well as on the processing conditions and device architectures suitable for high-performance devices.
机译：用过渡金属氧化物（例如三氧化钼（MoO-3））掺杂有机半导体（OSC）已被用作解决常见问题（如接触电阻和低电导率）的有效方法，而这些问题是有机光电器件中的限制因素。在这项研究中，通过同时在侧向二极管上进行电学和光谱学测量，研究了OSC中MoO_3诱导的p型掺杂的机理和效率。事实证明，真空以外的MoO_3能级的能量变化会限制电荷转移掺杂和器件性能。显示并研究了这些变化主要取决于OSC。推导了重要的OSC参数的时间演化，例如感应电荷密度，掺杂浓度和效率，电导率和迁移率。此外，通过紫外和X射线光发射光谱法研究了M0O_3中的能量和化学变化。结合这些实验，得出关于OSC MoO_3掺杂的时间依赖性和稳定性以及适用于高性能器件的工艺条件和器件架构的重要结论。

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  • 来源
    《Advanced Functional Materials》 |2011年第8期|p.1432-1441|共10页
  • 作者

    Michael C. Gwinner; Riccardo Di Pietro; Yana Vaynzof; KathiynJ. Creenberg; Peter K. H. Ho; Richard H. Friend; Henning Sirringhaus;

  • 作者单位

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

    Department of Physics National University of Singapore Lower Kent Ridge Road, S117542, Singapore;

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

    Department of Physics Cavendish Laboratory J. J. Thomson Avenue, Cambridge CB3 OHE, UK;

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