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Simultaneous Modification of Bottom-Contact Electrode and Dielectric Surfaces for Organic Thin-Film Transistors Through Single-Component Spin-Cast Monolayers

机译:通过单组分自旋铸造单层膜同时改性有机薄膜晶体管的底部接触电极和介电表面

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摘要

An efficient process is developed by spin-coating a single-component, self-assembled monolayer (SAM) to simultaneously modify the bottom-contact electrode and dielectric surfaces of organic thin-film transistors (OTFTs). This efficient interface modification is achieved using n-alkyl phosphonic acid based SAMs to prime silver bottom-contacts and hafnium oxide (HfO-2) dielectrics in low-voltage OTFTs. Surface characterization using near edge X-ray absorption fine structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, atomic force microscopy (AFM), and spectroscopic ellipsometry suggest this process yields structurally well-defined phosphonate SAMs on both metal and oxide surfaces. Rational selection of the alkyl length of the SAM leads to greatly enhanced performance for both n-channel (C_(60)) and p-channel (pentacene) based OTFTs. Specifically, SAMs of n-octylphos-phonic acid (OPA) provide both low-contact resistance at the bottom-contact electrodes and excellent interfacial properties for compact semiconductor grain growth with high carrier mobilities. OTFTs based on OPA modified silver electrode/HfO_2 dielectric bottom-contact structures can be operated using < 3V with low contact resistance (down to 700 Ohm-cm), low subthreshold swing (as low as 75 mV dec~(-1)), high on/off current ratios of TO~7, and charge carrier mobilities as high as 4.6 and 0.8 cm~2 NT~(-1) s~(-1) for C~(60) and pentacene, respectively. These results demonstrate that this is a simple and efficient process for improving the performance of bottom-contact OTFTs.
机译:通过旋涂单组分,自组装单层(SAM)来同时修饰有机薄膜晶体管(OTFT)的底部接触电极和介电表面,从而开发出一种有效的工艺。使用基于正烷基膦酸的SAM灌注低压OTFT中的银底触点和氧化ha(HfO-2)电介质,可以实现这种有效的界面改性。使用近边缘X射线吸收精细结构(NEXAFS)光谱,X射线光电子能谱(XPS),衰减全反射傅里叶变换红外(ATR-FTIR)光谱,原子力显微镜(AFM)和椭圆偏振光谱法进行表面表征该方法在金属和氧化物表面上产生结构明确的膦酸酯SAM。合理选择SAM的烷基长度可大大提高基于n通道(C_(60))和p通道(并五苯)的OTFT的性能。具体地说,正辛基膦酸(OPA)的SAM既提供了底部接触电极的低接触电阻,又提供了出色的界面性能,从而可以实现高载流子迁移率的紧凑型半导体晶粒生长。基于OPA改性银电极/ HfO_2介电底接触结构的OTFT可以在<3V的条件下以低接触电阻(低至700 Ohm-cm),低亚阈值摆幅(低至dec〜(-1)75 mV)运行, TO〜7的高开/关电流比,C〜(60)和并五苯的载流子迁移率分别高达4.6和0.8 cm〜2 NT〜(-1)s〜(-1)。这些结果表明,这是一种用于改善底部接触式OTFT性能的简单有效的方法。

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  • 来源
    《Advanced Functional Materials》 |2011年第8期|p.1476-1488|共13页
  • 作者单位

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;

    National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    Department of Chemistry Box 351700, University of Washington, Seattle, WA 98195-1700, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    Department of Physics University of Washington Box 351560, Seattle, WA 98195-1560, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;

    Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA,Department of Chemistry Box 351700, University of Washington, Seattle, WA 98195-1700, USA;

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