机译:通过单组分自旋铸造单层膜同时改性有机薄膜晶体管的底部接触电极和介电表面
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;
National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
Department of Chemistry Box 351700, University of Washington, Seattle, WA 98195-1700, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
Department of Physics University of Washington Box 351560, Seattle, WA 98195-1560, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
National ESCAand Surface Analysis Center for Biomedical Problems Departments of Bioengineering and Chemical Engineering, Box 351750, University of Washington, Seattle, WA 98195-1 750, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA;
Department of Materials Science and Engineering Box 352120, University of Washington, Seattle, WA 98195-2120, USA,Department of Chemistry Box 351700, University of Washington, Seattle, WA 98195-1700, USA;
机译:通过同时修饰电极和介电表面实现的底部接触小分子n型有机场效应晶体管
机译:用于并五苯有机薄膜晶体管的栅极介电表面改性的有机膦酸酯自组装单层:比较研究
机译:插入特氟龙作为表面改性层对基于底部接触并五苯的有机薄膜晶体管的影响
机译:在有机场效应晶体管中使用硫醇自组装单层在Au电极上使用硫醇
机译:利用膦酸酯单层处理的栅极电介质的改进的有机薄膜晶体管。
机译:一氧化氮介导的聚合反应可控合成聚五氟苯乙烯-甲基丙烯酸甲酯共聚物及其在有机薄膜晶体管中的介电层用途
机译:有机膦酸盐自组装单分子膜用于并联型有机薄膜晶体管的栅极介电表面改性:对比研究†