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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of Pentacene-Based Organic Thin-Film Transistors:A Comparative Study
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Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of Pentacene-Based Organic Thin-Film Transistors:A Comparative Study

机译：用于并五苯有机薄膜晶体管的栅极介电表面改性的有机膦酸酯自组装单层：比较研究

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摘要

Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon.A series of phosphonate-based self-assembled monolayers(SAMs)was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region.Octadecylphosphonate,(quarterthiophene)phosphonate,and(9-anthracene)phosphonate SAMs were examined.Significant improvements in the sub-threshold slope and threshold voltage were observed for each SAM treatment as compared to control devices fabricated without the buffer.These improvements were related to structural motif relationships between the pentacene semiconductor and the SAM constituents.Measured transistor properties were consistent with a reduction in density of charge trapping states at the semiconductor-dielectric interface that was effected by introduction of the self-assembled monolayer.
机译：在硅上制备了以并五苯为半导体的有机薄膜晶体管，并使用一系列基于膦酸酯的自组装单分子膜（SAMs）作为二氧化硅栅极电介质和并五苯沟道活性区之间的缓冲层。 ）和（9-蒽）膦酸酯SAMs。与没有缓冲液的对照装置相比，每种SAM处理的亚阈值斜率和阈值电压都有显着改善。测量的晶体管特性与通过引入自组装单层而导致的半导体-电介质界面处的电荷俘获态密度的降低相一致。

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