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首页> 外文期刊>Advanced Functional Materials >Reduction of Tungsten Oxide: A Path Towards Dual Functionality Utilization for Efficient Anode and Cathode Interfacial Layers in Organic Light-Emitting Diodes
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Reduction of Tungsten Oxide: A Path Towards Dual Functionality Utilization for Efficient Anode and Cathode Interfacial Layers in Organic Light-Emitting Diodes

机译：氧化钨的还原：有机发光二极管中高效阳极和阴极界面层双重功能利用的途径

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Here, we report on the dual functionality of tungsten oxide for application as an efficient electron and hole injection/transport layer in organic light-emitting diodes (OLEDs). We demonstrate hybrid polymer light-emitting diodes (Hy-PLEDs), based on a polyfluorene copolymer, by inserting a very thin layer of a partially reduced tungsten oxide, WO_(2.5), at the polymer/Al cathode interface to serve as an electron injection and transport layer. Significantly improved current densities, luminances, and luminous efficiencies were achieved, primarily as a result of improved electron injection at the interface with Al and transport to the lowest unoccupied molecular orbital (LUMO) of the polymer, with a corresponding lowering of the device driving voltage. Using a combination of optical absorption, ultraviolet spectoscopy, X-ray photoelectron spectroscopy, and photovoltaic open circuit voltage measurements, we demonstrate that partial reduction of the WO_3 to WO_(2.5) results in the appearance of new gap states just below the conduction band edge in the previously forbidden gap. The new gap states are proposed to act as a reservoir of donor electrons for enhanced injection and transport to the polymer LUMO and decrease the effective cathode workfunction. Moreover, when a thin tungsten oxide film in its fully oxidized state (WO_3) is inserted at the ITO anode/polymer interface, further improvement in device characteristics was achieved. Since both fully oxidized and partially reduced tungsten oxide layers can be deposited in the same chamber with well controlled morphology, this work paves the way for the facile fabrication of efficient and stable Hy-OLEDs with excellent reproducibility.
机译：在这里，我们报道了氧化钨的双重功能，该氧化钨可用作有机发光二极管（OLED）中的有效电子和空穴注入/传输层。我们通过在聚合物/ Al阴极界面处插入非常薄的部分还原的氧化钨WO_（2.5）的薄层，展示了一种基于聚芴共聚物的混合聚合物发光二极管（Hy-PLED）。注射和运输层。显着提高了电流密度，亮度和发光效率，这主要是由于在与Al的界面处改善了电子注入并传输至聚合物的最低未占据分子轨道（LUMO），同时相应降低了器件驱动电压。通过结合使用光吸收，紫外光谱，X射线光电子能谱和光伏开路电压测量，我们证明了将WO_3部分还原为WO_（2.5）会导致在导带边缘以下出现新的间隙态在以前禁止的差距。提出了新的间隙态，以充当供体电子的储库，以增强注入和向聚合物LUMO的传输并降低有效的阴极功函数。而且，当将处于完全氧化状态（WO_3）的氧化钨薄膜插入ITO阳极/聚合物界面时，可以实现器件特性的进一步改善。由于完全氧化和部分还原的氧化钨层都可以沉积在同一个腔室中，并且形态得到很好的控制，因此这项工作为方便地制造高效且稳定的Hy-OLED（具有出色的可重复性）铺平了道路。

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  • 来源
    《Advanced Functional Materials》 |2011年第8期|p.1489-1497|共9页
  • 作者

    Maria Vasilopoulou; Leonidas C. Palilis; Dimitra C. Georgiadou; Antonios M. Douvas; Panagiotis Argitis; Stella Kennou; Labrini Sygellou; Ceorgios Papadimitropoulos; loannisKostis; Nikos A. Stathopoulos; Dimitris Davazoglou;

  • 作者单位

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

    Department of Physics University of Patras 26500, Patras, Greece;

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

    Department of Chemical Engineering University of Patras 26500, Patras, Greece;

    Department of Chemical Engineering University of Patras 26500, Patras, Greece;

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

    Department of Electronics Technological and Educational Institute of Pireaus 12244 Aegaleo, Greece;

    Department of Electronics Technological and Educational Institute of Pireaus 12244 Aegaleo, Greece;

    Institute of Microelectronics NCSR Demokritos Terma Patriarchou Grigoriou, 15310, Aghia Paraskevi, Greece;

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