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Modification of Exciton Lifetime by the Metal Cathode in Phosphorescent OLEDs, and Implications on Device Efficiency and Efficiency Roll-off Behavior

机译:金属阴极在磷光OLED中对激子寿命的修正及其对器件效率和效率下降行为的影响

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摘要

Time resolved photoluminescence and electroluminescence measurements are used to study changes in the emission characteristics of materials typically used in phosphorescent organic light emitting devices (PhOLEDs). Studies on archetypical PhOLEDs with phosphorescent material, fac-tris(2-phenylpyridine) indium (lr(ppy)_3), show that the lifetime of triplet exciton is modified when in close proximity to a metal layer. Interactions with a metal layer ~30-100 nm away, as is typically the case in PhOLEDs, result in an increase in the spontaneous emission decay rate of triplet excitons, and causes the exciton lifetime to become shorter as the distance between the phosphorescent material and the metal becomes smaller. The phenomenon, possibly the result of the confined radiation field by the metal, affects device efficiency and efficiency roll-off behavior. The results shed the light on phenomena affecting the efficiency behavior of PhOLEDs, and provide new insights for device design that can help enhance efficiency performance.
机译:时间分辨的光致发光和电致发光测量用于研究磷光有机发光器件(PhOLED)中通常使用的材料的发射特性变化。具有磷光材料fac-tris(2-苯基吡啶)铟(lr(ppy)_3)的原型PhOLED的研究表明,三重态激子的寿命在靠近金属层时会改变。与PhOLED中通常约30-100 nm的金属层相互作用会导致三重态激子的自发发射衰减速率增加,并导致激子寿命随着磷光材料与金属之间的距离变短而缩短。金属变小。这种现象可能是金属限制的辐射场的结果,影响了器件效率和效率下降行为。结果揭示了影响PhOLED效率行为的现象,并为有助于提高效率性能的器件设计提供了新见解。

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  • 来源
    《Advanced Functional Materials》 |2011年第12期|p.2311-2317|共7页
  • 作者单位

    Department of Electrical and Computer Engineering University of Waterloo 200 University Avenue West,Waterloo, Ontario, N2L 3C1, Canada,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University) Ministry of Education Institute of Optoelectronics Technology Beijing Jiaotong University Beijing, 100044, China;

    Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University) Ministry of Education Institute of Optoelectronics Technology Beijing Jiaotong University Beijing, 100044, China;

    Department of Electrical and Computer Engineering University of Waterloo 200 University Avenue West,Waterloo, Ontario, N2L 3C1, Canada;

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