• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Thiophene-Benzothiadiazole Co-Oligomers: Synthesis, Optoelectronic Properties, Electrical Characterization, and Thin-Film Patterning
【24h】

Thiophene-Benzothiadiazole Co-Oligomers: Synthesis, Optoelectronic Properties, Electrical Characterization, and Thin-Film Patterning

机译：噻吩-苯并噻二唑共低聚物：合成，光电性质，电学表征和薄膜图案化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Newly synthesized thiophene (T) and benzothiadiazole (B) co-oligomers of different size, alternation motifs, and alkyl substitution types are reported. Combined spectroscopic data, electrochemical analysis, and theoretical calculations show that the insertion of a single electron-deficient B unit into the aromatic backbone strongly affects the LUMO energy level. The insertion of additional B units has only a minor effect on the electronic properties. Cast films of oligomers with two alternated B rings (B-T-B inner core) display crystalline order. Bottom-contact FETs based on films cast on bare SiO2 show hole-charge mobilities of 1 × 10~(-3)-5 × 10~(-3) cm~2 V~(-1)s~(-1) and /_(on) /I_(off)ratios of 10~5-10~6. Solution-cast films of cyclohexyl-substituted compounds are amorphous and do not show FET behavior. However, the lack of order observed in these films can be overcome by nanorubbing and unconventional wet lithography, which allow for fine control of structural order in thin deposits.
机译：据报道，新合成的噻吩（T）和苯并噻二唑（B）具有不同的大小，交替基序和烷基取代类型。结合光谱数据，电化学分析和理论计算表明，将单个缺电子的B单元插入芳族主链会强烈影响LUMO能级。插入额外的B单元对电子特性的影响很小。具有两个交替的B环（B-T-B内芯）的低聚物的流延膜显示结晶顺序。基于在裸露的SiO2上流延的薄膜的底部接触FET的空穴电荷迁移率为1×10〜（-3）-5×10〜（-3）cm〜2 V〜（-1）s〜（-1）和/ _（on）/ I_（off）比为10〜5-10〜6。环己基取代的化合物的流延膜是非晶态的，没有FET行为。但是，可以通过纳米摩擦和非常规的湿法光刻技术克服这些薄膜中观察不到的有序性，从而可以精细控制薄沉积物中的结构有序性。

著录项

  • 来源
    《Advanced Functional Materials》 |2010年第3期|445-452|共8页
  • 作者

    Manuela Melucci; Laura Favaretto; Alberto Zanelli; Massimiliano Cavallini; Alessandro Bongini; Piera Maccagnani; Paolo Ostoja; Gwennaelle Derue; Roberto Lazzaroni; Giovanna Barbarella;

  • 作者单位

    Istituto per la Sintesi Organica e la Fotoreattivita (ISOF) Consiglio Nazionale Ricerche via P. Gobetti, 101, 40129 Bologna (Italy);

    Istituto per la Sintesi Organica e la Fotoreattivita (ISOF) Consiglio Nazionale Ricerche via P. Gobetti, 101, 40129 Bologna (Italy);

    Istituto per la Sintesi Organica e la Fotoreattivita (ISOF) Consiglio Nazionale Ricerche via P. Gobetti, 101, 40129 Bologna (Italy);

    Istituto per i Materiali Nanostrutturati (ISMN) Consiglio Nazionale Ricerche via P. Gobetti 101, 40129 Bologna (Italy);

    Universita di Bologna Dipartimento di Chimica 'G. Ciamician' via F. Selmi, 2, 40122 Bologna (Italy);

    Istituto per la Microelettronica e i Microsistemi (IMM) Consiglio Nazionale Ricerche via P. Gobetti 101, 40129 Bologna (Italy);

    Istituto per la Microelettronica e i Microsistemi (IMM) Consiglio Nazionale Ricerche via P. Gobetti 101, 40129 Bologna (Italy);

    Service de Chimie des Materiaux Nouveaux Universite de Mons/Materia Nova 20, Place du Pare, B-7000 Mons (Belgium);

    Service de Chimie des Materiaux Nouveaux Universite de Mons/Materia Nova 20, Place du Pare, B-7000 Mons (Belgium);

    Istituto per la Sintesi Organica e la Fotoreattivita (ISOF) Consiglio Nazionale Ricerche via P. Gobetti, 101, 40129 Bologna (Italy);

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号