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首页> 外文期刊>Advanced Functional Materials >Stable, Glassy, and Versatile Binaphthalene Derivatives Capable of Efficient Hole Transport, Hosting, and Deep-Blue Light Emission
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Stable, Glassy, and Versatile Binaphthalene Derivatives Capable of Efficient Hole Transport, Hosting, and Deep-Blue Light Emission

机译：稳定，玻璃状和通用的双萘衍生物，能够有效地传输空穴，嵌入和深蓝光发射

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摘要

Organic light-emitting diodes (OLEDs) have great potential applications in display and solid-state lighting. Stability, cost, and blue emission are key issues governing the future of OLEDs. The synthesis and photoelectronics of a series of three kinds of binaphthyl (BN) derivatives are reported. BN_(1-3) are "melting-point-less" and highly stable materials, forming very good, amorphous, glass-like films. They decompose at temperatures as high as 485-545 ℃. At a constant current density of 25 mA cm~(-2), an ITO/BN_3/Al single-layer device has a much-longer lifetime (>80h) than that of an ITO/ NPB/Al single-layer device (8 h). Also, the lifetime of a multilayer device based on BN_1 is longer than a similar device based on NPB. BNs are efficient and versatile OLED materials: they can be used as a hole-transport layer (HTL), a host, and a deep-blue-light-emitting material. This versatility may cut the cost of large-scale material manufacture. More importantly, the deep-blue electroluminescence (emission peak at 444 nm with CIE coordinates (0.16, 0.11), 3.23 cd A~(-1) at 0.21 mA cm~(-2), and 25200 cd m~(-2) at 9 V) remains very stable at very high current densities up to 1000 mA cm~(-2).
机译：有机发光二极管（OLED）在显示器和固态照明中具有巨大的潜在应用。稳定性，成本和蓝色发射是支配OLED未来的关键问题。报道了一系列的三种联萘（BN）衍生物的合成和光电学。 BN_（1-3）是“无熔点”且高度稳定的材料，可形成非常好的无定形玻璃状薄膜。它们在高达485-545℃的温度下分解。在25 mA cm〜（-2）的恒定电流密度下，ITO / BN_3 / Al单层器件的寿命（> 80h）比ITO / NPB / Al单层器件的寿命长得多（8 H）。而且，基于BN_1的多层设备的寿命比基于NPB的类似设备的寿命更长。 BN是高效且用途广泛的OLED材料：它们可用作空穴传输层（HTL），主体和深蓝色发光材料。这种多功能性可以降低大规模材料制造的成本。更重要的是，深蓝色电致发光（发射峰在444 nm处，CIE坐标为（0.16，0.11），在0.21 mA cm〜（-2）处为3.23 cd A〜（-1），和25200 cd m〜（-2）在9 V时）在高达1000 mA cm〜（-2）的高电流密度下仍保持非常稳定的状态。

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  • 来源
    《Advanced Functional Materials》 |2010年第15期|P.2448-2458|共11页
  • 作者

    Bin Wei; rnJi-Zhong Liu; rnYong Zhang; rnJian-Hua Zhang; rnHua-Nan Peng; rnHe-Liang Fan; rnYan-Bo He; rnXi-Cun Gao;

  • 作者单位

    Key Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University P. O. B. 143, 149 Yanchang Road, Shanghai 200072 (China);

    rnKey Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University P. O. B. 143, 149 Yanchang Road, Shanghai 200072 (China);

    rnKey Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University P. O. B. 143, 149 Yanchang Road, Shanghai 200072 (China);

    rnKey Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University P. O. B. 143, 149 Yanchang Road, Shanghai 200072 (China);

    rnDepartment of Chemistry, School of Science, Nanchang University 999 Xue-Fu Road, Hong-Gu-Tan New District, Nanchang 330031 (China);

    rnDepartment of Chemistry, School of Science, Nanchang University 999 Xue-Fu Road, Hong-Gu-Tan New District, Nanchang 330031 (China);

    rnDepartment of Chemistry, School of Science, Nanchang University 999 Xue-Fu Road, Hong-Gu-Tan New District, Nanchang 330031 (China);

    rnDepartment of Chemistry, School of Science, Nanchang University 999 Xue-Fu Road, Hong-Gu-Tan New District, Nanchang 330031 (China) State Key Lab of Silicon Materials, Zhejiang University Hangzhou 310027 (China);

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