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A Densely And Uniformly Packed Organic Semiconductor Based On Annelated β/trithiophenes For High-performance Thin Film Transistors

机译:基于退火β/三噻吩的致密且均匀堆积的有机半导体,用于高性能薄膜晶体管

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摘要

A novel semiconductor based on annelated β-trithiophenes is presented, possessing an extraordinary compressed packing mode combining edge-to-face π-π interactions and S...S interactions in single crystals, which is favorable for more effective charge transporting. Accordingly, the device incorporating this semiconductor shows remarkably high charge carrier mobility, as high as 0.89 cm~2V~(-1) s~(-1) and an on/off ratio of 4.6 × 10~7 for vacuum-deposited thin films.
机译:提出了一种基于退火的β-三噻吩的新型半导体,该半导体具有非凡的压缩堆积模式,该模式结合了单晶中边对面的π-π相互作用和S ... S相互作用,有利于更有效的电荷传输。因此,装有这种半导体的器件显示出非常高的载流子迁移率,对于真空沉积的薄膜,其载流子迁移率高达0.89 cm〜2V〜(-1)s〜(-1),开/关比为4.6×10〜7 。

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