A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots

Takeshi Kondo; Sang Min Lee; Michal Malicki; Benoit Domercq; Seth R. Marder; Bernard Kippelen

首页> 外文期刊>Advanced Functional Materials >A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots

【24h】

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots

机译：使用Ag-纳米点修饰的ITO表面的非易失性有机存储装置

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on a single-layer organic memory device made of poly(N-vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs). Devices exhibit high ON/OFF switching ratios of 10~4. This level of performance could be achieved

机译：我们报告了由聚（N-乙烯基咔唑）制成的单层有机存储器件，该器件嵌入在Al电极和经Ag纳米点（Ag-NDs）改性的ITO之间。设备的开/关切换比很高，为10〜4。这样的性能水平可以实现

著录项

来源
《Advanced Functional Materials》 |2008年第7期|p.1112-1118|共7页
作者
Takeshi Kondo; Sang Min Lee; Michal Malicki; Benoit Domercq; Seth R. Marder; Bernard Kippelen;
展开▼
作者单位

Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr., Atlanta, CA 30332 (USA);

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films [J] . Sung-Min Yoon, Seung-Yun Lee, Soon-Won Jung, Japanese journal of applied physics . 2009,第4issue1期

机译：使用成分修饰的Ge-Sb-Te膜的多层结构的相变非易失性存储设备中增强的存储行为
2. Nonvolatile memory and opto-electrical characteristics of organic memory devices with zinc oxide nanoparticles embedded in the tris(8-hydroxyquinolinato)aluminum light-emitting layer [J] . Po-Ching Kao, Chien-Chi Liu, Ting-Yun Li Organic Electronics . 2015,第juna期

机译：在三（8-羟基喹啉基）铝发光层中嵌入氧化锌纳米粒子的有机存储器件的非易失性存储和光电特性
3. Carrier transport mechanisms of multilevel nonvolatile memory devices with a floating gate consisting of hybrid organic/inorganic nanocomposites [J] . Yu Na Kim, Dong Yeol Yun, Narayanasamy Sabari Arul, Organic Electronics . 2015,第feba期

机译：具有由杂化有机/无机纳米复合材料组成的浮栅的多层非易失性存储器件的载流子传输机制
4. Nonvolatile organic transistor-memory devices based on pentacene semiconductors and poly (methyl methacrylate)/graphene quantum-dot composite trap layers [C] . Ying-Jun Shen, Yan-Kuin Su, Hsin-Chieh Yu, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：基于并五苯半导体和聚（甲基丙烯酸甲酯）/石墨烯量子点复合陷阱层的非易失性有机晶体管存储器件
5. Molecular-scale organic electronic devices for integrated nonvolatile memory application. [D] . Graves-Abe, Troy. 2006

机译：用于集成非易失性存储器应用的分子级有机电子设备。
6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. Organic Memory Devices: 9,10-Imide-Pyrene-Fused Pyrazaacenes (IPPA) as N-Type Doping Materials for High-Performance Nonvolatile Organic Field Effect Transistor Memory Devices (Adv. Electron. Mater. 2/2019) [O] . Ze-Hua Wu, Wen-Jing Sun, Hu-Hu Tian, 2019

机译：有机记忆装置：9,10-酰亚胺 - 芘 - 融合吡唑（IPPA）作为N型掺杂材料，用于高性能非易失性有机场效应晶体管内存装置（ADV。电子。Matter。2/2019）
8. Nonvolatile and Cryogenic-Compatible Quantum Memory Devices (QuMEM). [R] . Nayfeh, O., Simonsen, K., Rees, D., 2016

机译：非易失性和低温兼容的量子存储器件（QumEm）。

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag-Nanodots

摘要

著录项

相似文献

相关主题

期刊订阅