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首页> 外文期刊>Advanced Functional Materials >Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices
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Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices

机译：溶液沉积氧化锌和氧化锌/并五苯双层晶体管：高迁移率n沟道，双极和非易失性器件

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摘要

A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2 cm~2 V~(-1)s~(-1) with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p-channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p-channel, ambipolar and n-channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6 × 10~(-3) and 6.3 × 10~(-3)cm~2 V~(-1)s~(-1) respectively. When the ZnO layer is very thin, the transistor shows p-channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated.
机译：通过简单的浸涂和随后的醋酸锌膜热处理，制造了经过溶液处理的n沟道氧化锌（ZnO）场效应晶体管（FET）。电子的场效应迁移率取决于ZnO晶粒度，可通过改变涂层数量和醋酸锌溶液浓度来控制。通过这种方法获得的最高电子迁移率是7.2 cm〜2 V〜（-1）s〜（-1），开/关比为70。该电子迁移率高于最近报道的溶液处理的ZnO晶体管。我们还制造了双层晶体管，其中第一层是ZnO，第二层是并五苯，一种通过热蒸发沉积的p沟道有机物。通过改变ZnO的晶粒尺寸（或厚度），这种类型的双层晶体管表现出p沟道，双极性和n沟道行为。对于双极晶体管，平衡良好的电子和空穴迁移率分别为7.6×10〜（-3）和6.3×10〜（-3）cm〜2 V〜（-1）s〜（-1）。当ZnO层非常薄时，晶体管会表现出具有非常高的可逆滞后性的p沟道行为。研究了该晶体管的非易失性调谐功能。

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