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首页> 外文期刊>Advanced Functional Materials >Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics
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Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics

机译：使用半导体纳米材料和超薄电介质的晶体管的容限和纳米力学

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This paper describes experimental and theoretical studies of the mechanics of free-standing nanoribbons and membranes of single-crystalline silicon transfer printed onto patterned dielectric layers. The results show that analytical descriptions of the mechanics agree well with experimental data, and they explicitly reveal how the geometry of dielectric layers (i.e., the width and depth of the features of relief) and the silicon (i.e., the thickness and widths of the ribbons) affect mechanical bowing (i.e., "sagging") in the suspended regions of the silicon. This system is of practical importance in the use of semiconductor nanomaterials for electronic devices, because incomplete sagging near defects in gate dielectrics provides a level of robustness against electrical shorting in those regions which exceeds that associated with conventional deposition techniques for thin films. Field effect transistors formed using silicon nanoribbons transferred onto a range of ultrathin gate dielectrics, including patterned epoxy, organic self-assembled monolayers, and HfO_2, demonstrate these concepts.
机译：本文描述了对印刷在图案化介电层上的自支撑纳米带和单晶硅膜的力学特性的实验和理论研究。结果表明，对力学的分析描述与实验数据非常吻合，并且它们清楚地揭示了介电层的几何形状（即浮雕特征的宽度和深度）和硅（即衬底的厚度和宽度）如何。带）影响硅的悬浮区域中的机械弯曲（即“下垂”）。该系统在用于电子设备的半导体纳米材料的使用中具有实际重要性，因为栅极电介质中缺陷附近的不完全下垂提供了针对那些区域中的电短路的鲁棒性水平，该鲁棒性水平超过了与传统的薄膜沉积技术相关的鲁棒性。使用硅纳米带形成的场效应晶体管证明了这些概念，这些硅纳米带转移到一系列超薄栅极电介质上，包括图案化的环氧树脂，有机自组装单层膜和HfO_2。

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