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Effect of SWNT Defects on the Electron Transfer Properties in P3HT/SWNT Hybrid Materials

机译：SWNT缺陷对P3HT / SWNT杂化材料中电子转移性能的影响

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摘要

Poly(3-hexylthiophene) (P3HT) hybrids with single-walled carbon nanotubes (SWNTs) were prepared using a series of SWNTs with various defect contents on their surfaces. The hybrids were synthesized by exploiting the π-π interaction between P3HT and the SWNTs, resulting in efficient dispersion of the carbon nanotubes in the P3HT solution. UV-visible and photoluminescence (PL) spectra showed that the carbon nanotubes quench the PL of P3HT in the hybrids, indicating that electron transfer occurs from photo-excited P3HT to the SWNTs. This electron transfer from P3HT to carbon nanotubes was disrupted by the presence of defects on the SWNT surfaces. However, the PL lifetime of P3HT in the hybrids was found to be the same as that of pure P3HT in solution, indicating the formation of a ground-state non-fluorescent complex of P3HT/SWNTs.
机译：使用一系列表面上具有各种缺陷含量的单壁碳纳米管，制备了具有单壁碳纳米管（SWNT）的聚（3-己基噻吩）（P3HT）杂化物。通过利用P3HT和SWNT之间的π-π相互作用合成杂化物，从而使碳纳米管有效分散在P3HT溶液中。紫外可见光和光致发光（PL）光谱表明，碳纳米管淬灭了杂化体中P3HT的PL，表明电子从光激发的P3HT到SWNT发生了转移。从P3HT到碳纳米管的这种电子转移被SWNT表面上缺陷的存在所破坏。然而，发现杂化物中P3HT的PL寿命与溶液中纯P3HT的PL寿命相同，这表明形成了P3HT / SWNTs的基态非荧光复合物。

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