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首页> 外文期刊>Advanced Functional Materials >Copper/Polyimide Heterojunctions: Controlling Interfacial Structures Through an Additive-Based, All-Wet Chemical Process Using Ion-Doped Precursors
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Copper/Polyimide Heterojunctions: Controlling Interfacial Structures Through an Additive-Based, All-Wet Chemical Process Using Ion-Doped Precursors

机译：铜/聚酰亚胺异质结：使用离子掺杂前体通过基于添加剂的全湿化学过程控制界面结构

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摘要

Heterojunctions comprising copper thin films and polyimide underlayers are exploited as an important system for generating flexible microelectronic circuit elements. A fully additive-based chemical method that allows metallization of polyimide films with copper by the in situ reduction of copper ions doped in surface-modified polyimide precursors is reported. It is shown that dimethylamine borane is a good reducing agent for copper ions initially complexed with carboxylate anions in the hydrolyzed polyimide layers. This reduction allows diffusion of copper ions towards the film surface to form copper thin films, and simultaneously controls the fabrication of interfacial microstructures between the copper and underlying polyimide. The formation of copper thin films and composite layers is elucidated by glow-discharge optical emission spectrometry depth profiling, scanning electron microscopy, and cross-sectional transmission electron microscopy studies, and it is shown that the final microstructure at the copper/polyimide interface is dependent upon experimental variables: a larger amount of copper ions incorporated into the modified layers and a higher reduction rate result in the formation of a granular layer containing smaller copper nanoparti-cles near the film surface. The granular layers thus formed are found to play a critical role in achieving strong adhesion between metal thin films and the substrate, owing to the increased contact area and hence the increased work of adhesion between them. These results have important implications for realizing a novel adhesion scheme between deposited metals and underlying dielectrics based on nanoscale interlocking through metal nanoparticles.
机译：包含铜薄膜和聚酰亚胺底层的异质结被用作产生柔性微电子电路元件的重要系统。报道了一种完全基于添加剂的化学方法，该方法允许通过原位还原表面改性的聚酰亚胺前体中掺杂的铜离子，使聚酰亚胺膜与铜金属化。结果表明，对于水解的聚酰亚胺层中最初与羧酸根阴离子络合的铜离子，二甲胺硼烷是一种很好的还原剂。这种还原允许铜离子向膜表面扩散以形成铜薄膜，并同时控制铜和下面的聚酰亚胺之间的界面微结构的制造。通过辉光放电光发射光谱深度剖析，扫描电子显微镜和截面透射电子显微镜研究阐明了铜薄膜和复合层的形成，结果表明，铜/聚酰亚胺界面的最终微观结构与根据实验变量：掺入改性层中的铜离子量较大，还原率较高，导致在膜表面附近形成包含较小铜纳米颗粒的颗粒层。由于增加的接触面积并因此增加它们之间的粘附功，发现由此形成的粒状层在实现金属薄膜与基底之间的强粘附力方面起关键作用。这些结果对于实现基于通过金属纳米颗粒的纳米级互锁的沉积金属与下面的电介质之间的新型粘合方案具有重要意义。

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