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High-performance and stable organic thin-film transistors based on fused thiophenes

机译：基于熔融噻吩的高性能，稳定的有机薄膜晶体管

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摘要

A series of new organic semiconductors for organic thin-film transistors (OTFTs) using dithieno[3,2-b:2',3'-d]thiophene as the core are synthesized. Their electronic and optical properties are investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-vis and photoluminescence spectroscopies, thermal gravimetric analysis (TGA), and differential scanning calorimetry (DSC). The compounds exhibit an excellent field-effect performance with a high mobility of 0.42 cm(2) V-1 s(-1) and an on/off ratio of 5 x 10(6). XRD patterns reveal these films, grown by vacuum deposition, to be highly crystalline, and SEM reveals well-interconnected, microcrystalline domains in these films at room temperature. TGA and DSC demonstrate that the phenyl-substituted compounds possess excellent thermal stability. Furthermore, weekly shelf-life tests (under ambient conditions) of the OTFTs based on the phenyl-substituted compounds show that the mobility for the bis(diphenyl)-substituted thiophene was almost unchanged for more than two months, indicating a high environmental stability.
机译：合成了一系列以二噻吩并[3,2-b：2'，3'-d]噻吩为核心的有机薄膜晶体管（OTFT）的新型有机半导体。使用扫描电子显微镜（SEM），X射线衍射（XRD），紫外可见光谱和光致发光光谱，热重分析（TGA）和差示扫描量热法（DSC）研究了它们的电子和光学性质。这些化合物具有出色的场效应性能，具有0.42 cm（2）V-1 s（-1）的高迁移率和5 x 10（6）的开/关比。 XRD图谱揭示了这些通过真空沉积生长的膜是高度结晶的，而SEM则显示了在室温下这些膜中互连良好的微晶域。 TGA和DSC证明苯基取代的化合物具有优异的热稳定性。此外，基于苯基取代的化合物的OTFT的每周保质期测试（在环境条件下）显示，双（二苯基）取代的噻吩的迁移率在两个多月内几乎没有变化，表明具有很高的环境稳定性。

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