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首页> 外文期刊>Advanced Functional Materials >Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles
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Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles

机译：通过用催化性金属颗粒刮擦硅表面来制造单晶硅纳米线

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摘要

A novel strategy for preparing large-area, oriented silicon nanowire (SiNW) arrays on silicon substrates at near room temperature by localized chemical etching is presented. The strategy is based on metal-induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution. The density and size of the as-prepared SiNW's depend on the distribution of the patterned metal particles on the silicon surface. High-density metal particles facilitate the formation of silicon nanowires. Well-separated, straight nanoholes are dug along the Si block when metal particles are well dispersed with a large space between them. The etching technique is weakly dependent on the orientation and doping type of the silicon wafer. Therefore, SiNWs with desired axial crystallographic orientations and doping characteristics are readily obtained. Detailed scanning electron microscopy observations reveal the formation process of the silicon nanowires, and a reasonable mechanism is proposed on the basis of the electrochemistry of silicon and the experimental results.
机译：提出了一种通过局部化学刻蚀在室温下在硅衬底上制备大面积取向硅纳米线（SiNW）阵列的新策略。该策略基于金属诱导的（由Ag或Au引起）过度的局部氧化和硅基板在氟化物水溶液中的溶解。所制备的SiNW的密度和尺寸取决于图案化的金属颗粒在硅表面上的分布。高密度金属颗粒有助于硅纳米线的形成。当金属颗粒充分分散且在它们之间具有较大间距时，沿着Si块会挖出分离良好的直纳米孔。蚀刻技术几乎不依赖于硅晶片的取向和掺杂类型。因此，容易获得具有期望的轴向晶体学取向和掺杂特性的SiNW。详细的扫描电子显微镜观察揭示了硅纳米线的形成过程，并根据硅的电化学性质和实验结果提出了合理的机理。

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