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机译:使用二氧化硅纳米粒子的金属辅助化学蚀刻,以制造硅纳米线阵列。
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
机译:金属辅助化学蚀刻综合研究Au Nano-inah作为硅纳米线阵列制造中的催化剂
机译:通过近场激光烧蚀和金属辅助化学刻蚀制造硅纳米线阵列
机译:通过可控的金属辅助化学刻蚀制备具有超高纵横比的双面晶圆级硅纳米线阵列
机译:使用金属辅助化学刻蚀为太阳能电池应用制造大规模协同硅纳米线阵列
机译:作为3D纳米制造平台的硅金属辅助化学蚀刻的开发。
机译:金属辅助化学蚀刻的无光刻技术制造硅纳米线和纳米孔阵列
机译:金属辅助化学蚀刻综合研究Au Nano-inah作为硅纳米线阵列制造中的催化剂