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首页> 外文期刊>Advanced Functional Materials >Perfect Bi4Ti3O12 single-crystal films via flux-mediated epitaxy
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Perfect Bi4Ti3O12 single-crystal films via flux-mediated epitaxy

机译：通过磁通介导的外延形成完美的Bi4Ti3O12单晶膜

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摘要

Excellent crystallinity of material films and atomic control of their surface/interface, sufficient for the realization of their optimal physical properties, are technological premises for modern functional-device applications. Bi4Ti3O12 and related compounds attract much interest as highly insulating, ferroelectric materials for use in ferroelectric random-access memories. However, it has been difficult thus far for Bi4Ti3O12 films to satisfy such requirements when formed using vapor-phase epitaxy, owing to the high volatility of Bi in a vacuum. Here, we demonstrate that flux-mediated epitaxy is one of the most promising and widely applicable concepts to overcome this inevitable problem. The key point of this process is the appropriate selection of a multi-component flux system. A combinatorial approach has led to the successful discovery of the novel flux composition of Bi-Cu-O for Bi4Ti3O12 single-crystal film growth. The perfect single-crystal nature of the stoichiometric Bi4Ti3O12 film formed has been verified through its giant grain size and electric properties, equivalent to those of bulk single crystals. This demonstration has broad implications, opening up the possibility of preparing stoichiometric single-crystal oxide films via vapor-phase epitaxy, even if volatile constituents are required.
机译：材料膜的出色结晶度和表面/界面的原子控制，足以实现其最佳物理性能，是现代功能设备应用的技术前提。 Bi4Ti3O12和相关化合物作为用于铁电随机存取存储器的高度绝缘的铁电材料引起了广泛的关注。然而，由于Bi在真空中的高挥发性，迄今为止，当使用气相外延形成Bi 4 Ti 3 O 12膜时，难以满足这种要求。在这里，我们证明通量介导的外延是克服这一不可避免的问题的最有希望和广泛适用的概念之一。该过程的关键是适当选择多组分助焊剂系统。组合方法已成功地发现了用于Bi4Ti3O12单晶膜生长的新型Bi-Cu-O助熔剂成分。通过其巨大的晶粒尺寸和电学性能已验证了所形成的化学计量Bi4Ti3O12膜具有完美的单晶性质，与块状单晶等效。该演示具有广泛的意义，即使需要挥发性成分，也可以通过气相外延制备化学计量的单晶氧化物膜。

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