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V-shaped thiophene-based oligomers with improved electroluminescence properties

机译:具有改善的电致发光性能的V形噻吩基低聚物

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The synthesis via the Stille coupling of a new family of oligomers derived from benzo[b]thiophene is reported. Owing to their branched molecular structure lacking any symmetry element, these compounds display a low tendency to crystallization and better film-forming properties than their linear counterparts. Spin-coated films show photoluminescence efficiencies up to 50%. Light-emitting diodes with spin-coated films as the active layers display markedly improved performance with respect to similar devices based on linear oligothiophenes, with luminance values up to more than 10 000 cd m(-2). Semiempirical PM3 and ZINDO/S calculations provide insight into the molecular geometries and electron distribution of the frontier orbitals of the new compounds. Cyclic voltammetry data indicates that the transformation of the thienyl sulfur of benzo[b]thiophene to the corresponding thienyl-SS-dioxide leads an increase in electron affinity by 0.5-0.7 V, analogous to that of the corresponding linear oligomers.
机译:据报道,通过斯蒂勒偶联合成了衍生自苯并[b]噻吩的新的低聚物家族。由于它们的支链分子结构缺少任何对称元素,因此与线性对应物相比,这些化合物显示出较低的结晶趋势和更好的成膜性能。旋涂膜显示出高达50%的光致发光效率。与基于线性低聚噻吩的类似器件相比,以旋涂膜作为有源层的发光二极管显示出显着改善的性能,其亮度值高达10000 cd m(-2)以上。半经验的PM3和ZINDO / S计算提供了对新化合物前沿轨道的分子几何结构和电子分布的洞察力。循环伏安法数据表明,苯并[b]噻吩的噻吩硫基向相应的噻吩基-SS-二氧化物的转化导致电子亲和力增加0.5-0.7 V,类似于相应的线性低聚物。

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