首页> 外文期刊>Advanced Functional Materials >Oxidation conditions for octadecyl trichlorosilane monolayers on silicon: A detailed atomic force microscopy study of the effects of pulse height and duration on the oxidation of the monolayer and the underlying Si substrate
【24h】

Oxidation conditions for octadecyl trichlorosilane monolayers on silicon: A detailed atomic force microscopy study of the effects of pulse height and duration on the oxidation of the monolayer and the underlying Si substrate

机译:硅上的十八烷基三氯硅烷单层的氧化条件:详细的原子力显微镜研究脉冲高度和脉冲持续时间对单层和下面的Si衬底氧化的影响

获取原文
获取原文并翻译 | 示例
           

摘要

In current scanning-probe nanolithography research substrates consisting of octadecyl trichlorosilane monolayers on silicon are often used. On one hand, the presence of an organic monolayer can be used passive resist, influencing the formation of silicon dioxide on the substrate, whereas in other cases the monolayer itself is patterned, creating local chemical functionality. In this study we investigate the time scales involved in either process. By looking at friction and height images of lines oxidized at different bias voltages and different pulse durations, we have determined the parameter space in which the formation of silicon dioxide is dominant as well as the region in which the oxidation of the monolayer itself is dominant.
机译:在当前的扫描探针纳米光刻研究中,通常使用由硅上的十八烷基三氯硅烷单层组成的基底。一方面,有机单层的存在可以用作无源抗蚀剂,从而影响在基底上二氧化硅的形成,而在其他情况下,单层本身被图案化,从而产生局部化学功能。在这项研究中,我们调查了这两个过程涉及的时间尺度。通过查看在不同偏置电压和不同脉冲持续时间下氧化的线的摩擦和高度图,我们确定了其中二氧化硅形成占主导地位的参数空间以及单层本身氧化占主导地位的区域。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号