Single-Crystalline Films of the Homologous Series InGaO_3(ZnO)_m Grown by Reactive Solid-Phase Epitaxy

Hiromichi Ohta; Kenji Nomura; Masahiro Orita; Masahiro Hirano; Kazushige Ueda; Toshiyuki Suzuki; Yuichi Ikuhara; Hideo Hosono

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Single-Crystalline Films of the Homologous Series InGaO_3(ZnO)_m Grown by Reactive Solid-Phase Epitaxy

机译：反应性固相外延生长的InGaO_3（ZnO）_m同源系列单晶薄膜

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Single-crystalline thin films of the homologous series InGaO_3(ZnO)_m (where m is an integer) are fabricated by the reactive solid-phase epitaxy (R-SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High-temperature annealing of bilayer films consisting of an amorphous InGaO_3(ZnO)_5 layer deposited at room temperature and an epitaxial ZnO layer on yttria-stabilized zirconia (YSZ) substrate allows for the growth of single-crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.

机译：通过反应性固相外延（R-SPE）法制造同源系列InGaO_3（ZnO）_m（其中m是整数）的单晶薄膜。具体而言，明确了ZnO作为外延引发剂层的生长机理的作用。由在室温下沉积的非晶InGaO_3（ZnO）_5层和氧化钇稳定的氧化锆（YSZ）衬底上的外延ZnO层组成的双层膜的高温退火可以使化学成分受控的单晶膜生长。外延ZnO薄层在确定晶体取向方面起着至关重要的作用，而两层的厚度之比控制着膜的组成。

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《Advanced Functional Materials》 |2003年第2期|p.139-144|共6页
作者
Hiromichi Ohta; Kenji Nomura; Masahiro Orita; Masahiro Hirano; Kazushige Ueda; Toshiyuki Suzuki; Yuichi Ikuhara; Hideo Hosono;
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Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan);

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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Epitaxial growth of superlattice YbGaO_3(ZnO)_5 and InGaO_3(ZnO)_5 films by the combination of sputtering and reactive solid phase epitaxy [J] . Hou-Guang Chen, Yung-Shiang Lin Thin Solid Films . 2013,第octa31期

机译：溅射和反应性固相外延相结合外延生长超晶格YbGaO_3（ZnO）_5和InGaO_3（ZnO）_5薄膜
2. Growth and structure of heteroepitaxial thin films of homologous compounds RAO_3(MO)_m by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers [J] . Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Thin Solid Films . 2006,第1期

机译：反应性固相外延生长同源化合物RAO_3（MO）_m的异质外延薄膜的结构：适用于多种材料和外延模板层
3. Structure of Iron Silicide film on Si(111) Grown by Solid-Phase Epitaxy and Reactive Deposition Epitaxy [J] . Masuaki MATSUMOTO, Kaoru SUGIE, Taizou KAWAUCHI, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第3B期

机译：固相外延和反应沉积外延生长的Si（111）上的硅化铁膜的结构
4. Reactive solid-phase epitaxy a novel growth method for single-crystalline thin films of complex oxides with superlattice structure [C] . H.Ohta, K.Nomura, H.Hiramatsu, MRS Meeting . 2003

机译：具有超晶格结构的复合氧化物单晶薄膜的反应性固相外延新的生长方法
5. Electrical properties of ZnO grown by metalorganic vapour phase epitaxy. [D] . Li, Dichen. 2011

机译：金属有机气相外延生长ZnO的电学性质。
6. Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy [O] . Zhi-Qiang Zou, Li-Min Sun, Gao-Ming Shi, 2013

机译：通过反应沉积外延在Si（111）上生长c（4（×8）相的均相FeSi2晶体膜
7. Fabrication and Low Temperature Thermoelectric Properties of Na_xCoO_2 (x = 0.68 and 0.75) Epitaxial Films by the Reactive Solid-Phase Epitaxy [O] . Chang, W. J., Hsieh, C. C., Chung, T. Y., 2007

机译：Na_xCoO_2的制备及低温热电性能（x = 0.68和0.75）外延膜由反应固相外延组成

Single-Crystalline Films of the Homologous Series InGaO_3(ZnO)_m Grown by Reactive Solid-Phase Epitaxy

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