Atomic Layer Deposition of TiO_2 Thin Films on Mixed Self-Assembled Monolayers Studied as a Function of Surfae Free Energy

Jae P. Lee; Young J. Jang; Myung M. Sung

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Atomic Layer Deposition of TiO_2 Thin Films on Mixed Self-Assembled Monolayers Studied as a Function of Surfae Free Energy

机译：混合自组装单分子膜上TiO_2薄膜的原子层沉积研究

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Mixed self-assembled monolayers (SAMs) with different ratios of -OH to -CH_3 groups were used to modify the surface free energies of the Si substrates from 64 to 29 mNm~(-1). The TiO_2 thin films were grown on the mixed SAM-coated Si substrates by atomic layer deposition (ALD) from titaniu isopropoxide and water. A two-dimensioal growth mode is observed on the SAMs-coated substrates possessing high surface free energies. As the surface free energy decreases, a three-dimensional growth mode begins to dominate. These observations indicate that the mixed SAMs can control the growth modes of the atomic layer deposition by modifying of the surface free energies of the substrates.

机译：用不同比例的-OH与-CH_3基团混合的自组装单分子层（SAMs）将Si衬底的表面自由能从64mNm〜（-1）改变为29mNm〜（-1）。 TiO_2薄膜通过异丙醇钛和水的原子层沉积（ALD）在混合的SAM涂覆的Si基片上生长。在具有高表面自由能的SAMs涂层基底上观察到二维生长模式。随着表面自由能的减少，三维生长模式开始占主导地位。这些观察结果表明，混合的SAM可以通过改变衬底的表面自由能来控制原子层沉积的生长模式。

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来源
《Advanced Functional Materials》 |2003年第11期|p. 873-876|共4页
作者
Jae P. Lee; Young J. Jang; Myung M. Sung;
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作者单位

Departmet of Chemistry, Kookmin University 861-1, Chongnung-dong, Songbuk-ku Seoul, 136-702 (Korea);

Departmet of Chemistry, Kookmin University 861-1, Chongnung-dong, Songbuk-ku Seoul, 136-702 (Korea);

Departmet of Chemistry, Kookmin University 861-1, Chongnung-dong, Songbuk-ku Seoul, 136-702 (Korea);

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正文语种 eng
中图分类无线电电子学、电信技术;
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Atomic Layer Deposition of TiO_2 Thin Films on Mixed Self-Assembled Monolayers Studied as a Function of Surfae Free Energy

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