Synthesis and Characterisation of Gallium Antimonide Nanoparticles: Reaction between Tris(trimethylsilyl)antimonide and Gallium Trichloride

Stephan Schulz; Leonardo Martinez; Jean L. Ross

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Synthesis and Characterisation of Gallium Antimonide Nanoparticles: Reaction between Tris(trimethylsilyl)antimonide and Gallium Trichloride

机译：锑化镓纳米粒子的合成与表征：三（三甲基甲硅烷基）锑化物与三氯化镓的反应

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摘要

The reaction between GaCl_3 and Sb(SiMe_3)_3 in a 1:1 mole ratio at 110℃ in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses. Microscopy studies (SEM and TEM) show the formation of nanocrystals with a predominant crystal size of 20-30 nm.

机译：GaCl_3与Sb（SiMe_3）_3在1：1的摩尔比下于110℃的甲苯中反应生成锑化镓GaSb，已通过电子衍射研究，EDX和元素分析对其进行了表征。显微镜研究（SEM和TEM）表明，形成的纳米晶体的主要晶体尺寸为20-30 nm。

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来源
《Advanced Materials for Optics and Electronics》 |1996年第4期|p.185-189|共5页
作者
Stephan Schulz; Leonardo Martinez; Jean L. Ross;
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作者单位

Department of Chemistry, University of Iowa, Iowa City, IA 52242., U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
semiconductor; Ⅲ-Ⅴ materials; GaSb; nanocrystals; SEM; TEM; electron diffraction; dehalosilylation;

机译：半导体;Ⅲ-Ⅴ族材料;GaSb;纳米晶体;SEM;TEM;电子衍射;脱卤硅烷化;

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1. TEMPERATURE-CONTROLLED SYNTHESIS OF GALLIUM ANTIMONIDE NANOPARTICLES IN SOLUTION [J] . Stephan Schulz, Wilfried Assenmacher Materials Research Bulletin . 1999,第12a13期

机译：溶液中温度控制的金酸酐纳米粒子的合成
2. Novel ternary alkaline-earth and rare-earth metal antimonides from gallium or indium flux. Synthesis, structural characterization and ~(121)Sb and ~(151)Eu M?ssbauer spectroscopy of the series A_7Ga _8Sb_8 (A = Sr, Ba, Eu) and Ba_7In _8Sb_8 [J] . Bobev S., Hullmann J., Harmening T., Dalton transactions: An international journal of inorganic chemistry . 2010,第26期

机译：来自镓或铟助焊剂的新型三元碱土金属和稀土金属锑化物。 A_7Ga _8Sb_8系列（A = Sr，Ba，Eu）和Ba_7In _8Sb_8的合成，结构表征以及〜（121）Sb和〜（151）Eu M？ssbauer光谱
3. Reactions of Dimethyl[tris(trimethylsilyl)methyl]metalanes of Aluminum and Gallium with H_2S and Elemental Chalcogens - Crystal Structures of [RA](μ-S)]_2 · 2 THF, [RGa(μ_3-S)]_4, [{RAl(μ_3-S)}_3MeAl(μ_3-S)], [RAlMe(μ-SeMe)]_2, and [RGaMe(μ-Te [J] . Christoph Schnitter, Andreas Klemp, Herbert W. Roesky, European journal of inorganic chemistry . 1998,第12期

机译：铝和镓的二甲基[三（三甲基甲硅烷基）甲基]烷烃与H_2S和元素硫属元素的反应-[RA]（μ-S）] _ 2·2 THF，[RGa（μ_3-S）] _ 4，[{ RAl（μ_3-S）} _ 3MeAl（μ_3-S）]，[RAlMe（μ-SeMe）] _ 2和[RGaMe（μ-Te）
4. Defect reactions in gallium antimonide studied by zinc and self-diffusion [C] . Kirsten Sunder, Hartmut Bracht International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：锌和自扩散研究锑化镓中的缺陷反应
5. Study of palladium/gallium antimonide reactions and ohmic contacts to N-type gallium antimonide. [D] . Robinson, Joshua Alexander. 2005

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6. Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide [O] . Herbert S. Bennett, Howard Hung 2003

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7. DEVELOPMENT OF DIRECTIONAL SOLIDIFICATION SYSTEM AND SYNTHESIS OF GALLIUM ANTIMONIDE AND ITS CHARACTERISATION [O] . J. Chidanandappa . 2016

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Synthesis and Characterisation of Gallium Antimonide Nanoparticles: Reaction between Tris(trimethylsilyl)antimonide and Gallium Trichloride

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