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Electrical Tunability of Domain Wall Conductivity in LiNbO_3 Thin Films

机译：LiNbO_3薄膜中畴壁电导率的电可调性

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摘要

Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20 degrees with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.
机译：畴壁纳米电子学是一个快速发展的领域，它探索了用于低维电子系统的铁电畴壁的各种电子特性。铁电畴壁的最突出特征之一是它们的电导率。在这里，结合使用扫描探针和扫描透射电子显微镜，研究了在技术上重要的铁电LiNbO3的亚微米厚膜中畴壁的可调导电行为机理。可以发现，电偏压产生稳定的畴，该畴具有强烈倾斜的畴边界，并且相对于极轴的倾斜角达到20度。头对头磁畴边界表现出高电导率，可以通过施加亚矫顽电压来调节。电子书写区域的电子显微镜可视化和相同区域的压电响应力显微镜成像显示，畴壁的导电状态和绝缘状态之间的逐渐和可逆转变是由样品表面附近的电感应壁弯曲导致的。相场建模证实了观察到的壁电导调制。结果为将导电畴壁用作多层逻辑纳米电子器件中的电可控功能元件开辟了可能性。

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