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首页> 外文期刊>Advanced Materials >Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Craphene with Controlled Defects
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Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Craphene with Controlled Defects

机译：利用具有可控缺陷的Craphene打破基于阳离子的电阻式开关设备中的电流保持难题

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摘要

Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentrali-zing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure-defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (approximate to 1 mu A) memory and a high driving current (approximate to 1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current-retention dilemma will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.
机译：在超高密度非易失性存储器应用中，以导电丝（CF）形成/溶解为主导的基于阳离子的电阻开关（RS）器件被广泛考虑。然而，随着顺从电流的减小，CF稳定性大大恶化的电流保持难题使得难以减小用于存储器应用的工作电流并且难以增大用于选择器应用的驱动电流。通过集中/分散CF分布，首次打破了基于阳离子的RS器件的电流保持难题。利用石墨烯的不渗透性，结构缺陷的石墨烯可以很好地调节到RS层的阳离子注入路径，从而控制CF的数量和大小。通过石墨烯缺陷工程，在同一材料系统中成功实现了低工作电流（约1μA）存储器和高驱动电流（约1 mA）选择器。基于系统的材料分析，受石墨烯缺陷尺寸调节的CF直径是CF稳定性的主要因素。解决当前保留难题的突破将指导将来实现不受串扰问题影响的RS存储器高密度3D集成的实现。

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  • 来源
    《Advanced Materials》 |2018年第14期|1705193.1-1705193.9|共9页
  • 作者

    Zhao Xiaolong; Ma Jun; Xiao Xiangheng; Liu Qi; Shao Lin; Chen Di; Liu Sen; Niu Jiebin; Zhang Xumeng; Wang Yan; Cao Rongrong; Wang Wei; Di Zengfeng; Lv Hangbing; Long Shibing; Liu Ming;

  • 作者单位

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;

    Wuhan Univ, Hubei Nucl Solid Phys Key Lab, Dept Phys, Wuhan 430072, Hubei, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA;

    Los Alamos Natl Lab, Mat Sci & Technol Div, Los Alamos, NM 87545 USA;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    conductive filaments (CF); defective graphene; ion barriers; resistive switching memory; threshold switching;

    机译：导电丝（CF）;缺陷石墨烯;离子势垒;电阻开关存储器;阈值开关;

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