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首页> 外文期刊>RSC Advances >Control of resistive switching behaviors of solution- processed HfOX-based resistive switching memory devices by n-type doping
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Control of resistive switching behaviors of solution- processed HfOX-based resistive switching memory devices by n-type doping

机译：通过n型掺杂控制溶液处理的基于HfOX的电阻式开关存储器件的电阻式开关行为

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In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfOX-based resistive switching memory (RRAM) devices. The observations are discussed in terms of oxygen vacancies according to doping concentration. The initial resistance and forming voltages are influenced by doping concentration due to the reduction of formation energy of oxygen vacancies, whereby a higher concentration of dopant results in a lower forming voltage and initial resistance of RRAM devices. In addition, the Ni dopant has a significant effect on forming processes in HfOX-based RRAM devices. It is observed that 10% of Ni doping can lead to forming-free behaviors. This study demonstrates the facile control of resistive switching behaviors by doping processes during the preparation of solutions and suggests that proper doping is an easy method that can lead to modulation of RRAM properties for future nonvolatile memory applications.
机译：在这项研究中，我们研究了Ni和Ta掺杂对溶液处理的基于HfOX的电阻开关存储器（RRAM）器件的电阻开关行为的影响。根据氧空位根据掺杂浓度讨论了这些观察结果。由于氧空位的形成能的降低，掺杂浓度影响初始电阻和形成电压，从而较高浓度的掺杂剂导致RRAM器件的形成电压和初始电阻较低。此外，Ni掺杂剂对基于HfOX的RRAM器件中的形成过程具有重要影响。观察到10％的Ni掺杂可导致无成形行为。这项研究证明了在溶液制备过程中通过掺杂过程可以轻松控制电阻开关行为，并建议适当的掺杂是一种简便的方法，可以为未来的非易失性存储器应用带来RRAM特性的调制。

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