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首页> 外文期刊>Advanced Materials >A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T Transition-Metal Telluride and Near-Field Nanooptical Properties
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A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T Transition-Metal Telluride and Near-Field Nanooptical Properties

机译：一种合成高质量毫米级1T过渡金属碲化物和近场纳米光学性质的简单方法

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摘要

The controlled synthesis of MoTe2 and WTe2 is crucial for their fundamental research and potential electronic applications. Here, a simplified ambient-pressure chemical vapor deposition (CVD) strategy is developed to synthesize high-quality and large-scale monolayer and few-layer 1T-phase MoTe2 (length approximate to 1 mm) and WTe2 (length approximate to 350 mu m) crystals by using ordinary salts (KCl or NaCl) as the growth promoter combining with low-cost (NH4)(6)Mo(7)O(24)4H(2)O and hydrate (NH4)(10)W(12)O(41)xH(2)O as the Mo and W sources, respectively. Atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy confirm the high-quality nature and the atomic structure of the as-grown 1T MoTe2 and WTe2 flakes. Variable-temperature transport measurements exhibit their semimetal properties. Furthermore, near-field nanooptical imaging studies are performed on the 1T MoTe2 and WTe2 flakes for the first time. The sub-wavelength effects of 1T-phase MoTe2 (lambda(p) approximate to 140 nm) and WTe2 (lambda(p) approximate to 100 nm) are obtained. This approach paves the way for the growth of special transition-metal dichalcogenides materials and boosts the future polaritonic research of 2D telluride compounds.
机译：MoTe2和WTe2的受控合成对其基础研究和潜在的电子应用至关重要。在此，开发了一种简化的常压化学气相沉积（CVD）策略，以合成高质量且大规模的单层和几层1T相MoTe2（长度大约为1 mm）和WTe2（长度大约为350μm） ）晶体，使用普通盐（KCl或NaCl）作为生长促进剂，并与低成本（NH4）（6）Mo（7）O（24）4H（2）O和水合物（NH4）（10）W（12 ）O（41）xH（2）O分别作为Mo和W源。原子力显微镜，X射线光电子能谱，拉曼光谱和透射电子显微镜证实了所生长的1T MoTe2和WTe2薄片的高质量性质和原子结构。变温传输测量显示其半金属特性。此外，首次对1T MoTe2和WTe2薄片进行了近场纳米光学成像研究。获得了1T相MoTe2（λ近似为140 nm）和WTe2（λ近似为100 nm）的子波长效应。这种方法为特殊的过渡金属二硫属化合物材料的生长铺平了道路，并促进了二维碲化物化合物的未来极化研究。

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  • 来源
    《Advanced Materials》 |2017年第38期|1700704.1-1700704.9|共9页
  • 作者

    Chen Kun; Chen Zefeng; Wan Xi; Zheng Zebo; Xie Fangyan; Chen Wenjun; Gui Xuchun; Chen Huanjun; Xie Weiguang; Xu Jianbin;

  • 作者单位

    Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Hong Kong 999077, Hong Kong, Peoples R China|Chinese Univ Hong Kong, Technol Res Ctr, Hong Kong 999077, Hong Kong, Peoples R China|Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Hong Kong 999077, Hong Kong, Peoples R China|Chinese Univ Hong Kong, Technol Res Ctr, Hong Kong 999077, Hong Kong, Peoples R China;

    Jiangnan Univ, Engn Res Ctr IoT Technol Applicat, Minist Educ, Dept Elect Engn, Wuxi 214122, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Jinan Univ, Siyuan Lab, Dept Phys, Guangzhou 510632, Guangdong, Peoples R China;

    Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Hong Kong 999077, Hong Kong, Peoples R China|Chinese Univ Hong Kong, Technol Res Ctr, Hong Kong 999077, Hong Kong, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    1T MoTe2; 1T WTe2; APCVD; ordinary salt promoters; sub-wavelength effect;

    机译：1T MoTe2;1T WTe2;APCVD;普通盐促进剂;亚波长效应;

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