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Bio-Inspired Complementary Photoconductor by Porphyrin-Coated Silicon Nanowires

机译:卟啉涂层硅纳米线的生物启发互补光电导体

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摘要

The integration of nanophotonics and electronics can bring about enhanced performance in areas ranging from communication, interconnections, and computing to novel diagnostics.[1-9] A critical challenge for integrating photonics and electronics is the component size mismatch stemming from the micrometer scale of optical elements, i.e., photo-conductors (or light detectors), versus the nanometer scale of modern electronic devices.[10,11] Thus, nanometer-scale photo-conductors have predominantly been fabricated using II-VI or III-V compound semiconducting nanowires rather than silicon nanowires (SiNWs) to achieve enhanced light absorption,[12-14] although it should be possible to exploit the extensive knowledge base supporting silicon technologies.
机译:纳米光子学与电子学的集成可以在从通信,互连,计算到新颖的诊断等领域带来更高的性能。[1-9]集成光子学与电子学的关键挑战是由于光学尺的微米级而导致的组件尺寸失配元素,即光电导体(或光探测器)与现代电子设备的纳米级相比。[10,11]因此,主要使用II-VI或III-V复合半导体纳米线制造了纳米级光电导体。而不是使用硅纳米线(SiNW)来实现增强的光吸收,[12-14]尽管应该有可能利用支持硅技术的广泛知识库。

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  • 来源
    《Advanced Materials》 |2011年第34期|p.3979-3983|共5页
  • 作者单位

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Chemical and Biomolecular Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    School of Chemistry Center for Organized Matter Chemistry University of Bristol, BS8, ITS, UK;

    Department of Chemical and Biomolecular Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Electrical Engineering KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

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