Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

Sondra L. Hellstrom; Run Zhi Jin; Randall M. Stoltenberg; Zhenan Bao

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Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

机译：碳纳米管/共轭聚合物复合电极直接从溶液中形成图形，从而驱动高性能n和p型有机晶体管

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The development of flexible, solution-processable components for high-performance n- and p- channel organic transistors is critical for applying organic electronics technology to applications such as flexible flat panel displays. Current research focuses on improvement of effective mobility, stability, and reliability in these transistors, all of which suffer when carrier injection from an electrode into the semiconductor is inadequate. This is most pronounced in the bottom contact configuration, where nonlinear behavior in the small VDS regime and high parasitic resistances are pervasive. Most notably, recent progress in flexible, solution-deposited n-channel materials has not been matched by work on similarly flexible, solution-deposited electrodes to drive them. Demonstrated solution-deposited wholly organic electrodes for n-channel materials remain very rare, but some previous examples have been prepared from PEDOT:PSS and carbon paste.

机译：为高性能n沟道和p沟道有机晶体管开发可解决方案的柔性组件，对于将有机电子技术应用于诸如柔性平板显示器之类的应用至关重要。当前的研究集中在改善这些晶体管的有效迁移率，稳定性和可靠性，当从电极向半导体中注入的载流子不足时，所有这些都会受到影响。这在底部接触配置中最为明显，在这种情况下，普遍存在着小VDS态和高寄生电阻的非线性行为。最值得注意的是，在柔性的，沉积有溶液的n沟道材料方面的最新进展尚未与在类似的柔性，沉积有溶液的电极上进行驱动的工作相匹配。展示的用于n通道材料的溶液沉积的全有机电极仍然非常少见，但以前的一些示例是由PEDOT：PSS和碳糊制成的。

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《Advanced Materials》 |2010年第37期|p.4204-4208|共5页
作者
Sondra L. Hellstrom; Run Zhi Jin; Randall M. Stoltenberg; Zhenan Bao;
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Stauffer III, 381 North-South Mall Stanford University Stanford, CA 94305 (USA);

rnStauffer III, 381 North-South Mall Stanford University Stanford, CA 94305 (USA);

rnStauffer III, 381 North-South Mall Stanford University Stanford, CA 94305 (USA);

rnStauffer III, 381 North-South Mall Stanford University Stanford, CA 94305 (USA);

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Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

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