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Pulsed Vapor-Liquid-Solid Growth of Antimony Selenide and Antimony Sulfide Nanowires

机译:硒化锑和硫化锑纳米线的脉冲汽-液-固生长

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摘要

The vapor-liquid-solid (VLS) growth of nanostructures from gaseous precursor molecules, a catalyzed chemical vapor deposition, enjoys the status of gold standard in the preparation of semiconductor wires of the group IV elements (Si, Ge), the III-V compounds (GaN, GaP, GaAs, InP, InAs), as well as some oxides. The situation is drastically different for V-VI semiconductors (A_2B_3 with A = As, Sb, Bi, and B = S, Se, Te), for which VLS growth has been documented from molecular precursors in only one case,in addition to two examples of catalytic physical vapor deposition (one from heated elements, the other from heated powder).
机译:气态前体分子从纳米结构的气液固(VLS)生长,催化化学气相沉积,在制备IV类元素(Si,Ge),III-V族半导体线时享有金标准的地位化合物(GaN,GaP,GaAs,InP,InAs)以及一些氧化物。对于V-VI半导体(A_2B_3,其中A = As,Sb,Bi和B = S,Se,Te),情况截然不同,除了两种情况外,只有一种情况证明了分子前体的VLS生长催化物理气相沉积的示例(一种来自加热的元素,另一种来自加热的粉末)。

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  • 来源
    《Advanced Materials》 |2009年第31期|3170-3174|共5页
  • 作者单位

    Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Institute of Applied Physics, University of Hamburg Jungiusstr. 11, 20355 Hamburg (Germany) Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Germany);

    Institute of Applied Physics, University of Hamburg Jungiusstr. 11, 20355 Hamburg (Germany);

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