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Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition

机译：通过添加锑抑制硅纳米线的气液固生长

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摘要

The effect of Sb addition on the growth rate and structural properties of Si nanowires synthesized by vapor-liquid-solid growth was investigated. The nanowire growth rate was reduced by an order of magnitude following the addition of a low concentration pulse of trimethylantimony (TMSb) to the gas phase during growth. Transmission electron microscopy analysis revealed that the wires had a thick amorphous coating (similar to 8 nm) around the catalyst particle and a distorted catalyst shape. Energy-dispersive x-ray spectroscopy showed the presence of trace amounts of Sb in the amorphous coating around the catalyst and at the catalyst-wire interface. Antimony was also found to be incorporated in the Si nanowires with a peak in the Sb concentration measured at the initial point where the TMSb pulse was added to the gas stream. The significant reduction in wire growth rate was attributed to Sb segregation at the vapor-liquid and liquid-solid interfaces which results in a change in interfacial energies and a reduction in the rate of Si incorporation at these interfaces.
机译：研究了添加Sb对气液固相生长合成Si纳米线的生长速率和结构性能的影响。在生长过程中向气相添加低浓度的三甲基锑（TMSb）脉冲后，纳米线的生长速率降低了一个数量级。透射电子显微镜分析显示，导线在催化剂颗粒周围具有厚的非晶涂层（类似于8 nm），并且催化剂形状变形。能量色散X射线光谱法表明，在催化剂周围和催化剂-金属丝界面处的无定形涂层中存在痕量的Sb。还发现锑掺入了Si纳米线，并在将TMSb脉冲添加到气流的起始点测得的Sb浓度峰值。线生长速率的显着降低归因于在气-液和液-固界面处的Sb偏析，这导致界面能的变化和这些界面处Si掺入率的降低。

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