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Ambipolar, Single-Component, Metal-Organic Thin-Film Transistors with High and Balanced Hole and Electron Mobilities

机译:具有高且平衡的空穴和电子迁移率的双极性单组分金属有机薄膜晶体管

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摘要

Ambipolar carrier transport materials have attracted interest in the area of fundamental science in organic semiconductors, and also in the area of device applications as light-emitting transistors and complementary metal-oxide semiconductor (CMOS)-like logic circuits. So far, ambipolar organic thin-film transistors (OTFTs) have been fabricated using blends or bilayer structures with p- and n-type materials. Recently, ambipolar OTFTs based on a single-component semiconductor have also been reported. The advantages of single-component ambipolar semiconductors are: (ⅰ) the high crystallinity of thin films, which decreases the number of boundaries that can cause carrier traps; and (ⅱ) the simplification of device fabrication. Conventional organic semiconductors tend to exhibit ambipolar transport with nonbalanced field-effect hole and electron mobilities because of the wide band gap (ca. 2eV). To realize high-performance ambipolar OTFTs with balanced hole and electron mobilities, it is necessary to develop narrow-band-gap semiconductors.
机译:双极性载流子传输材料在有机半导体的基础科学领域以及在作为发光晶体管和类似互补金属氧化物半导体(CMOS)的逻辑电路的器件应用领域中引起了人们的兴趣。迄今为止,已经使用具有p型和n型材料的共混物或双层结构制造了双极性有机薄膜晶体管(OTFT)。最近,也已经报道了基于单组分半导体的双极性OTFT。单组分双极半导体的优点是:(ⅰ)薄膜的高结晶度,减少了可能引起载流子陷阱的边界数量; (ⅱ)简化设备制造。由于宽带隙(约2eV),传统的有机半导体往往表现出具有不平衡的场效应空穴和电子迁移率的双极性传输。为了实现具有平衡的空穴和电子迁移率的高性能双极性OTFT,有必要开发窄带隙半导体。

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