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首页> 外文期刊>Advanced Materials >Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion
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Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion

机译：通过离子插入高效的单轴平面拉伸2D材料

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摘要

On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (approximate to 1 V) and produce considerable strains (approximate to 1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful "straintronic" devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of LixWTe2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li0.5-delta WTe2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of delta of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li0.5-delta WTe2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.
机译：片上动态应变工程需要有效的微致动器，可以产生大的面内菌株。无机电化学致动器是独特的，因为它们由低电压（近似为1V）驱动并产生相当大的菌株（近似为1％）。然而，致动速度和效率受到离子的大规模运输的限制。因此，最小化致动所需的离子数是启用有用的“Straintronic”装置的关键。这里，示出将特殊几个锂离子进入WTE2的电化学插入在一个面内方向上具有大的各向异性面内应变：5％，另一个方向上为0.1％。 2D WTE2层的这种有效拉伸与相关材料中的插层诱导的菌株对比，其主要是在平面外方向上的相关材料。 Lixwte2的不寻常致动与形成新发现的晶体相的形成，其称为Td'，具有异国情调的原子排列。在过渡到新型相及其组合物上，证明了片上的低压（＆ 0.2 v）控制。在TD'-LI0.5-DELTA WTE2相中，通过仅0.075的增量的变化来实现1.4％的单轴面内应变。这使得TD'-LI0.5-Delta WTE2的面内化学膨胀系数远远大于任何其他单相材料，从而实现快速高效的平面电化学致动。

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  • 来源
    《Advanced Materials》 |2021年第37期|2101875.1-2101875.9|共9页
  • 作者

    Muscher Philipp K.; Rehn Daniel A.; Sood Aditya; Lim Kipil; Luo Duan; Shen Xiaozhe; Zajac Marc; Lu Feiyu; Mehta Apurva; Li Yiyang; Wang Xijie; Reed Evan J.; Chueh William C.; Lindenberg Aaron M.;

  • 作者单位

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Inst Mat & Energy Sci SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA|PULSE Inst SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    Los Alamos Natl Lab Computat Phys Div Los Alamos NM 87545 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Inst Mat & Energy Sci SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA|PULSE Inst SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Synchrotron Radiat Lightsource SLAC Natl Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Inst Mat & Energy Sci SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA|PULSE Inst SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA|SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA;

    Stanford Synchrotron Radiat Lightsource SLAC Natl Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Inst Mat & Energy Sci SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|Stanford Inst Mat & Energy Sci SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

    Stanford Univ Dept Mat Sci & Engn Stanford CA 94305 USA|PULSE Inst SLAC Natl Accelerator Lab Menlo Pk CA 94025 USA;

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  • 正文语种 eng
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  • 关键词

    2D materials; actuation; electrochemistry; in situ XRD; intercalation; structural analysis; WTe; (2);

    机译：2D材料;致动;电化学;原位XRD;插层;结构分析;WTE;（2）;

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