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Device Physics of Solution-Processed Organic Field-Effect Transistors

机译：溶液处理的有机场效应晶体管的器件物理

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摘要

Field-effect transistors based on solution-processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing-based manufacturing processes for integrated transistor circuits are being developed to realize low-cost, large-area electronic products on flexible substrates. This article reviews the materials, charge-transport, and device physics of solution-processed organic field-effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge-injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored.
机译：近年来，基于可溶液处理的有机半导体的场效应晶体管在性能和可靠性上均取得了令人印象深刻的改进，并且正在开发基于印刷的集成晶体管电路制造工艺，以实现低成本，大面积柔性电子产品。基材。本文回顾了溶液处理的有机场效应晶体管的材料，电荷传输和器件物理特性，尤其关注有源半导体/电介质界面的物理特性。本文对诸如微观结构与电荷传输之间的关系，栅极电介质的关键作用，极化子弛豫和无序效应对电荷传输，电荷注入机制以及对电荷俘获机制的当前理解等问题进行了综述。关于分子和电子结构以及有机/有机异质界面上缺陷的存在如何影响器件性能和稳定性的许多有趣问题尚待探索。

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