The micro-Raman and the micro-photoluminescence spectra of nanocrystalline porous silicon measured on the same spot of the samples under He-Ne or Ar laser irradiation of variable power level have been studied. The different Si-H_x(x = 1,2,3) stretching vibrational modes located at 2114, 2087, and 2145 cm~(-1), respectively, were readily revealed by the Raman scattering measurement. By laser irradiation, the hydrogen desorption from Si-HX bonds was observed. This hydrogen desorption leads to a decrease in the photoluminescence efficiency and a redshift in the photoluminescence peaks. A method for determination of semi-quantitative correlation between the Si-H_x bonds and the photoluminescence of the PSi has been proposed.
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