首页> 外文期刊>American journal of applied sciences >DESIGN OF HIGH-SPEED PARALLEL IN PARALLEL OUT SHIFT REGISTER USING ALGAAS/GAAS MODFET TECHNOLOGY
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DESIGN OF HIGH-SPEED PARALLEL IN PARALLEL OUT SHIFT REGISTER USING ALGAAS/GAAS MODFET TECHNOLOGY

机译:基于ALGAAS / GAAS MODFET技术的并行输出移位寄存器中的高速并行设计

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摘要

This study enumerates the efficient design and analysis of Parallel In Parallel Out (PIPO) shift register using AlGaAs/GaAs MODFET D flip-flop. The transient and power analysis are obtained with operating voltage at 1.3 V for the D flip-flop and PIPO shift register using pspice tool. There are many issues facing while integrating many number of transistors like delay, power dissipation, scaling of the transistors. To overcome these problem by Considered the AlGaAs/GaAs MODFET have promising application in the field of electronics. The simulation results are done and the power consumptions and delay are compared with the conventional MOSFET design. The comparison of results the MODFET based design is capable of efficient power savings.
机译:这项研究列举了使用AlGaAs / GaAs MODFET D触发器的Parallel In Parallel Out(PIPO)移位寄存器的高效设计和分析。使用pspice工具在D触发器和PIPO移位寄存器中以1.3 V的工作电压获得瞬态和功率分析。集成许多晶体管时面临许多问题,例如延迟,功耗,晶体管缩放。通过考虑克服这些问题,AlGaAs / GaAs MODFET在电子领域具有广阔的应用前景。完成了仿真结果,并将功耗和延迟与常规MOSFET设计进行了比较。基于MODFET的设计的结果比较能够有效节省功率。

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