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High-Isolation and Low-Loss RF MEMS Shunt Switches

机译：高隔离度和低损耗RF MEMS分流开关

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摘要

This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively.
机译：本文介绍了使用三维RF仿真器Em3ds10（2008版）软件针对1-40 GHz频率范围的射频（RF）微机电系统（MEMS）分流开关的设计和仿真。并联电容开关是静电驱动的，并设计有曲折梁支架以降低吸合电压。基于矩量法的复杂结构的快速仿真可实现MEMS开关的优化设计。该开关具有2.5 V的仿真吸合电压，在12 GHz时的插入损耗和隔离RF性能分别小于-0.2 dB和-50 dB。

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  • 作者

    Haslina Jaafar; Othman Sidek; Azman Miskam; Razi Abdul-Rahman;

  • 作者单位

    Department of Electrical and Electronics Engineering, Faculty of Engineering Universiti Putra Malaysia, 43400, Serdang, Selangor,Collaborative Microelectronic Design Excellence Centre Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang, Malaysia;

    Collaborative Microelectronic Design Excellence Centre Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang, Malaysia;

    Collaborative Microelectronic Design Excellence Centre Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang, Malaysia;

    Collaborative Microelectronic Design Excellence Centre Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang, Malaysia,School of Mechanical Engineering Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang, Malaysia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    insertion loss; isolation; low voltage; MEMS; method-of-moment; RF MEMS; shunt switch;

    机译：插入损耗隔离;低电压;MEMS;瞬间法RF MEMS;分流开关;

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