Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy

Hattori Ryo; Oku Osamu; Sugie Ryuichi; Murakami Kazutsugu; Kuzuhara Masaaki

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Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy

机译：相差显微镜光学分辨4H-SiC外延层中的位错

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The superior nondestructive distinguishability of threading screw dislocations and threading edge dislocations in SiC epitaxial layers by phasecontrast microscopy using our optical system was demonstrated by comparing our experimental results with those obtained by conventional polarized light microscopy, photoluminescence topography, and KOH etching. It was confirmed that phase-contrast microscopy was more effective than polarized light microscopy in terms of the nondestructive discrimination of threading dislocations. (C) 2018 The Japan Society of Applied Physics.

机译：通过将我们的实验结果与传统的偏光显微镜，光致发光形貌和KOH蚀刻获得的结果进行比较，证明了使用我们的光学系统通过相衬显微镜在SiC外延层中的螺纹位错和螺纹边缘位错具有优异的无损分辨能力。已经证实，就穿刺位错的无损鉴别而言，相差显微镜比偏振光显微镜更有效。（C）2018年日本应用物理学会。

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《Applied physics express》 |2018年第7期|075501.1-075501.3|共3页
作者
Hattori Ryo; Oku Osamu; Sugie Ryuichi; Murakami Kazutsugu; Kuzuhara Masaaki;
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Ceram Forum Co Ltd, Chiyoda Ku, Tokyo 1010054, Japan;

Microworld Serv, Toshima Ku, Tokyo 1700005, Japan;

Toray Res Ctr Ltd, Otsu, Shiga 5208567, Japan;

Ceram Forum Co Ltd, Chiyoda Ku, Tokyo 1010054, Japan;

Univ Fukui, Fukui 9108507, Japan;

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1. Conversion of basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with a vicinal off-angle [J] . Keiko Masumoto, Sachiko Ito, Hideto Goto, Materials science forum . 2014,第pta1期

机译：4H-SiC衬底上具有邻角倾斜的外延层生长过程中基面位错向螺纹边缘位错的转换
2. Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method [J] . Ryo Hattori, Osamu Oku, Ryuichi Sugie, Materials science forum . 2019,第期

机译：通过相位对比显微镜法测定TSDS和TEDS在4H-SiC基板中的光学辨别和外延层
3. Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging [J] . M.E. TWIGG, Y.N. PICARD, J.D. CALDWELL, Journal of Electronic Materials . 2010,第6期

机译：GaN和4H-SiC外延层中电子位错的衍射位错的电子沟道对比成像
4. Conversion of basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with a vicinal off-angle [C] . Keiko Masumoto, Sachiko Ito, Hideto Goto, Conference on Silicon Carbide and Related Materials . 2014

机译：基于平面脱位转化为带有邻近偏角的4H-SiC基板上外延层的螺纹边缘位错
5. High Resolution Radiation Detectors Based on 4H-SiC N-Type Epitaxial Layers and Pixilated CdZnTe Single Crystal Devices [D] . Oner, Cihan. 2018

机译：基于4H-SiC N型外延层和像素Cdznte单晶装置的高分辨率辐射检测器
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers [O] . M. Naganoa, I. Kamatab, H. Tsuchidac 2016

机译：光致发光成像与4H-siC外延层中线程位错的判别
8. Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H-SiC Homoepitaxial Layers [R] . Maximenko, S. I., Freitas, J. J., Myers-Ward, R. L., 2010

机译：螺纹螺纹和刃口位错对4H-siC同质外延层输运性能的影响

Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy

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