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首页> 外文期刊>Applied physics express >Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
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Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

机译：等离子体辅助分子束外延生长在稀氮化物半导体生长过程中的氮气流驱动Al意外掺入

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摘要

We report the unintentional incorporation of Al during the growth of molecular beam epitaxy using RF plasma source, driven by N_2 gas flow. The concentrations of N, Al, O, and C within GaNAs/GaAs/AlAs structure are investigated by secondary ion mass spectrometry. In spite of the closed shutter of Al cell, we observe Al incorporation with a concentration up to 1 × 10~(18) cm~(-3) in GaNAs layer and characteristically in the bottom side GaAs. Its concentration is solely dependent on N_2 gas flow rate. Remarkably, the operation of the RF plasma has no impact on that. C and O show their concentrations corresponding to the extrinsic Al. The complex interactions between those elements predict a possible origin of material deteriorations and difficulty for the precise doping control.
机译：我们报告了在使用N_2气流驱动的RF等离子体源在分子束外延生长过程中无意掺入Al。通过二次离子质谱研究了GaNAs / GaAs / AlAs结构中N，Al，O和C的浓度。尽管铝电池的百叶窗是封闭的，但我们仍观察到铝在GaNAs层中以及特征在底部GaAs中的掺入浓度高达1×10〜（18）cm〜（-3）。其浓度仅取决于N_2气体流速。值得注意的是，RF等离子体的操作对此没有影响。 C和O显示出它们对应于外在Al的浓度。这些元素之间的复杂相互作用预示了材料变质的可能来源以及精确掺杂控制的难度。

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